Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

Amanuel M. Berhane, Kwang Yong Jeong, Zoltán Bodrog, Saskia Fiedler, Tim Schröder, Noelia Vico Triviño, Tomás Palacios, Adam Gali, Milos Toth, Dirk Englund, Igor Aharonovich

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Abstract

Researchers report room-temperature (RT), bright, stable single-photon emitters (SPEs) in GaN films that do not require any post-growth sample treatments. The emitters are defects that are optically active in the visible/near-infrared spectral range, and the zero-phonon lines (ZPL) span a wide range of wavelengths. They are found in five GaN wafers that have different doping types and levels, and are grown on various substrates using metal organic chemical vapor deposition various substrates using metal organic chemical vapor deposition (MOCVD), the most common commercially viable technique for the growth of device-grade GaN.

Original languageEnglish
Article number1605092
JournalAdvanced Materials
Volume29
Issue number12
DOIs
Publication statusPublished - Mar 28 2017

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Keywords

  • cubic inclusions
  • gallium nitride wafer
  • narrow linewidth
  • point defects
  • single-photon sources

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Berhane, A. M., Jeong, K. Y., Bodrog, Z., Fiedler, S., Schröder, T., Triviño, N. V., Palacios, T., Gali, A., Toth, M., Englund, D., & Aharonovich, I. (2017). Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride. Advanced Materials, 29(12), [1605092]. https://doi.org/10.1002/adma.201605092