Boron-vacancy complex in sic

A. Gali, P. Deák

Research output: Contribution to journalArticle

23 Citations (Scopus)


First principle calculations have been carried out to investigate the position of a boron atom in a divacancy of cubic silicon carbide. The perfect lattice was modeled by a large molecular cluster. The total energy of the cluster was calculated within the local density approximation of the density functional theory and the wave function was expanded by linear combination of Gaussian type atomic orbitals. The results of the calculations on the boron-vacancy system resolve the contradiction between magnetic resonance and photoluminescence experiments regarding the deep boron center, establishing the (Formula presented) configuration as its origin.

Original languageEnglish
Pages (from-to)10620-10623
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number15
Publication statusPublished - Jan 1 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Boron-vacancy complex in sic'. Together they form a unique fingerprint.

  • Cite this