Boron clustering in implanted NiSi

A. Portavoce, I. Blum, D. Mangelinck, K. Hoummada, L. Chow, V. Carron, J. L. Lábár

Research output: Contribution to journalArticle

7 Citations (Scopus)


B redistribution in a B-implanted polycrystalline NiSi layer has been investigated using atom probe tomography and secondary ion mass spectrometry. The B accumulations observed at the SiO2/NiSi interface and in the NiSi bulk are due to B clustering. B cluster formation at these two locations is shown to have a major impact upon the entire B distribution observed after annealing. The formation of B clusters in the NiSi bulk may be due to implantation-related defects.

Original languageEnglish
Pages (from-to)828-831
Number of pages4
JournalScripta Materialia
Issue number9
Publication statusPublished - May 2011



  • Boron
  • Cluster
  • Implantation
  • Ni-silicides

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

Cite this

Portavoce, A., Blum, I., Mangelinck, D., Hoummada, K., Chow, L., Carron, V., & Lábár, J. L. (2011). Boron clustering in implanted NiSi. Scripta Materialia, 64(9), 828-831.