Boron centers in 4H-SiC

B. Aradi, A. Gali, P. Deák, E. Rauls, Th Frauenheim, N. T. Son

Research output: Contribution to journalConference article

20 Citations (Scopus)


The origin of the 'deep boron related acceptor level' in SiC is subject to a lot of controversy. Based on ENDOR investigations, a BSi+Vc model was suggested, while PL studies indicated the acceptor on the carbon sublattice. Our former ab initio LDA molecular cluster calculation showed that in the BSi+VC complex the carbon vacancy acts as the acceptor. Now, ab initio LDA supercell calculations have been carried out for boron-related complexes to calculate the occupation levels in 4H-SiC. It has been found that 0/- level for the BSi+VC complex lies in the upper half of the gap, therefore it can be disregarded as the origin of the 'deep boron-related acceptor level'. Investigating other feasible boron-related complexes, BSi+SiC appears to be the best candidate.

Original languageEnglish
Pages (from-to)455-458
Number of pages4
JournalMaterials Science Forum
Publication statusPublished - 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Aradi, B., Gali, A., Deák, P., Rauls, E., Frauenheim, T., & Son, N. T. (2001). Boron centers in 4H-SiC. Materials Science Forum, 353-356, 455-458.