Bilayer Cr/Au contacts on n-GaN

Research output: Contribution to journalArticle


Cr/Au (40/65 nm) metal layers have been deposited by thermal evaporation onto n-GaN epitaxial layers grown by metal-organic chemical-vapour deposition (MOCVD) on a sapphire substrate. The samples have been annealed at 400, 700 and 900 °C for 10 min in vacuum. Techniques of TEM, EDS, HRTEM, FESEM, XRD and I-V characteristics have been used to characterize the micro-, and nanostructure, morphology, composition and electrical properties of the contacts before and after annealing. A binary phase of Cr 3Ga 4 and Au 7Ga 2 were identified at the interface of the n-GaN/Cr/Au contacts after annealing in vacuum at 700 and 900 °C. Current-voltage characterizations showed that the as-deposited and annealed Cr/Au contacts are rectifying up to 600 °C. After heat treatment in vacuum at 700 °C and 900 °C the Cr/Au contacts were linear.

Original languageEnglish
Pages (from-to)769-772
Number of pages4
Issue number6
Publication statusPublished - Jan 27 2012


  • Contacts
  • GaN
  • Solid phase reaction
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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