The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation process of a thin film is monitored by the evolution of damage pattern, current distribution, macroscopic sample resistance and its fluctuations, defect concentration and device lifetime. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes is considered. The results can be used to propose non-destructive indicators for testing the reliability of samples and to interpret experiments.
|Number of pages||4|
|Publication status||Published - Dec 1 1997|
|Event||Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 2 (of 2) - Nis, Yugosl|
Duration: Sep 14 1997 → Sep 17 1997
|Other||Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 2 (of 2)|
|Period||9/14/97 → 9/17/97|
ASJC Scopus subject areas