Biased percolation model for the analysis of electronic-device degradation

Z. Gingl, C. Pennetta, L. B. Kiss, L. Reggiani

Research output: Contribution to conferencePaper

Abstract

The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation process of a thin film is monitored by the evolution of damage pattern, current distribution, macroscopic sample resistance and its fluctuations, defect concentration and device lifetime. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes is considered. The results can be used to propose non-destructive indicators for testing the reliability of samples and to interpret experiments.

Original languageEnglish
Pages651-654
Number of pages4
Publication statusPublished - Dec 1 1997
EventProceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 2 (of 2) - Nis, Yugosl
Duration: Sep 14 1997Sep 17 1997

Other

OtherProceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 2 (of 2)
CityNis, Yugosl
Period9/14/979/17/97

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Gingl, Z., Pennetta, C., Kiss, L. B., & Reggiani, L. (1997). Biased percolation model for the analysis of electronic-device degradation. 651-654. Paper presented at Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 2 (of 2), Nis, Yugosl, .