Biased percolation and electrical breakdown

C. Pennetta, Z. Gingl, L. B. Kiss, L. Reggiani

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

To analyse the degradation of a thin-film conductor we have extended the biased percolation model to the case of electrical breakdown associated with a systematic decrease of the resistance. As relevant indicators of the degradation process we have chosen the damage pattern, the current and temperature distributions, the change of resistance, the lifetime, the relative resistance fluctuations and its power spectrum associated with 1/f noise. Our results are in a satisfactory agreement with available experiments, exhibiting several features which take place close to the abrupt failure of a thin-film device, and confirm the usefulness of the biased percolation model as a tool to investigate degradation processes. Analogies and differences between the two opposite situations when degradation occurs with a systematic increase or decrease of the resistance are discussed.

Original languageEnglish
Pages (from-to)1057-1063
Number of pages7
JournalSemiconductor Science and Technology
Volume12
Issue number9
DOIs
Publication statusPublished - Sep 1997

Fingerprint

electrical faults
breakdown
degradation
Degradation
Thin film devices
current distribution
thin films
Power spectrum
power spectra
Temperature distribution
temperature distribution
conductors
damage
Thin films
life (durability)
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Biased percolation and electrical breakdown. / Pennetta, C.; Gingl, Z.; Kiss, L. B.; Reggiani, L.

In: Semiconductor Science and Technology, Vol. 12, No. 9, 09.1997, p. 1057-1063.

Research output: Contribution to journalArticle

Pennetta, C. ; Gingl, Z. ; Kiss, L. B. ; Reggiani, L. / Biased percolation and electrical breakdown. In: Semiconductor Science and Technology. 1997 ; Vol. 12, No. 9. pp. 1057-1063.
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