Biased percolation and abrupt failure of electronic devices

Z. Gingl, C. Pennetta, L. B. Kiss, L. Reggiani

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We propose a new percolation model as an aid to understand abrupt failure of electronic devices. It is called biased percolation because we assume that local Joule heating determines the probability of generating defects causing percolative breakdown of the device. We take as a simple geometry a homogeneous thin film, modelled as a two-dimensional resistor network. By carrying out Monte Carlo simulations we investigate the evolution of the system including: the damage pattern, current distribution, resistance degradation, resistance relative fluctuations and its power spectrum associated with 1/f noise. Our results show that biased percolation efficiently simulates degradation of thin films in good agreement with available experiments and predicts several features that should take place close to the abrupt failure of most devices.

Original languageEnglish
Pages (from-to)1770-1775
Number of pages6
JournalSemiconductor Science and Technology
Volume11
Issue number12
DOIs
Publication statusPublished - Dec 1 1996

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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