Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses

R. G. Morton, R. L. Sandstrom, G. M. Blumenstock, Z. Bor, C. K. Van Peski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Fused silica samples from seven different suppliers were exposed at low fluence; nominally 0.1 mJ/cm2, for tens of billions of pulses. These materials are used in the manufacture of projection and other optics needed for DUV microlithography. The fluence level chosen for the exposures was intended to be close to that seen by some of the critical lenses in the projection assembly. Rather than the `compaction' reported by many workers, most of the samples exhibited the opposite effect. The reduction of optical path by DUV radiation or `rarefaction', as we have called it, is a physical phenomenon not known or published previous to our work. Data and experimental conditions are presented which will hopefully lead to the ultimate full understanding of the rarefaction process.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Volume4000
Publication statusPublished - 2000
EventOptical Microlithography XIII - Santa Clara, CA, USA
Duration: Mar 1 2000Mar 3 2000

Other

OtherOptical Microlithography XIII
CitySanta Clara, CA, USA
Period3/1/003/3/00

Fingerprint

rarefaction
Fused silica
Lithography
Lenses
Optics
fluence
Compaction
projection
silicon dioxide
Radiation
radiation
pulses
optical paths
assembly
lenses
optics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Morton, R. G., Sandstrom, R. L., Blumenstock, G. M., Bor, Z., & Van Peski, C. K. (2000). Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4000). Society of Photo-Optical Instrumentation Engineers.

Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses. / Morton, R. G.; Sandstrom, R. L.; Blumenstock, G. M.; Bor, Z.; Van Peski, C. K.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4000 Society of Photo-Optical Instrumentation Engineers, 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Morton, RG, Sandstrom, RL, Blumenstock, GM, Bor, Z & Van Peski, CK 2000, Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 4000, Society of Photo-Optical Instrumentation Engineers, Optical Microlithography XIII, Santa Clara, CA, USA, 3/1/00.
Morton RG, Sandstrom RL, Blumenstock GM, Bor Z, Van Peski CK. Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4000. Society of Photo-Optical Instrumentation Engineers. 2000
Morton, R. G. ; Sandstrom, R. L. ; Blumenstock, G. M. ; Bor, Z. ; Van Peski, C. K. / Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4000 Society of Photo-Optical Instrumentation Engineers, 2000.
@inproceedings{e7ad9641fa044e9899e66d47af490ad0,
title = "Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses",
abstract = "Fused silica samples from seven different suppliers were exposed at low fluence; nominally 0.1 mJ/cm2, for tens of billions of pulses. These materials are used in the manufacture of projection and other optics needed for DUV microlithography. The fluence level chosen for the exposures was intended to be close to that seen by some of the critical lenses in the projection assembly. Rather than the `compaction' reported by many workers, most of the samples exhibited the opposite effect. The reduction of optical path by DUV radiation or `rarefaction', as we have called it, is a physical phenomenon not known or published previous to our work. Data and experimental conditions are presented which will hopefully lead to the ultimate full understanding of the rarefaction process.",
author = "Morton, {R. G.} and Sandstrom, {R. L.} and Blumenstock, {G. M.} and Z. Bor and {Van Peski}, {C. K.}",
year = "2000",
language = "English",
volume = "4000",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",

}

TY - GEN

T1 - Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses

AU - Morton, R. G.

AU - Sandstrom, R. L.

AU - Blumenstock, G. M.

AU - Bor, Z.

AU - Van Peski, C. K.

PY - 2000

Y1 - 2000

N2 - Fused silica samples from seven different suppliers were exposed at low fluence; nominally 0.1 mJ/cm2, for tens of billions of pulses. These materials are used in the manufacture of projection and other optics needed for DUV microlithography. The fluence level chosen for the exposures was intended to be close to that seen by some of the critical lenses in the projection assembly. Rather than the `compaction' reported by many workers, most of the samples exhibited the opposite effect. The reduction of optical path by DUV radiation or `rarefaction', as we have called it, is a physical phenomenon not known or published previous to our work. Data and experimental conditions are presented which will hopefully lead to the ultimate full understanding of the rarefaction process.

AB - Fused silica samples from seven different suppliers were exposed at low fluence; nominally 0.1 mJ/cm2, for tens of billions of pulses. These materials are used in the manufacture of projection and other optics needed for DUV microlithography. The fluence level chosen for the exposures was intended to be close to that seen by some of the critical lenses in the projection assembly. Rather than the `compaction' reported by many workers, most of the samples exhibited the opposite effect. The reduction of optical path by DUV radiation or `rarefaction', as we have called it, is a physical phenomenon not known or published previous to our work. Data and experimental conditions are presented which will hopefully lead to the ultimate full understanding of the rarefaction process.

UR - http://www.scopus.com/inward/record.url?scp=0033683083&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033683083&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033683083

VL - 4000

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

ER -