Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

F. Roccaforte, F. Giannazzo, A. Alberti, M. Spera, M. Cannas, I. Cora, B. Pécz, F. Iucolano, G. Greco

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Φ B ) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

Original languageEnglish
Pages (from-to)164-170
Number of pages7
JournalMaterials Science in Semiconductor Processing
Volume94
DOIs
Publication statusPublished - May 2019

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Keywords

  • Barrier spatial inhomogeneity
  • Free standing GaN
  • Ni/GaN interface
  • Schottky barrier

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Roccaforte, F., Giannazzo, F., Alberti, A., Spera, M., Cannas, M., Cora, I., Pécz, B., Iucolano, F., & Greco, G. (2019). Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride. Materials Science in Semiconductor Processing, 94, 164-170. https://doi.org/10.1016/j.mssp.2019.01.036