Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

F. Roccaforte, F. Giannazzo, A. Alberti, M. Spera, M. Cannas, I. Cora, B. Pécz, F. Iucolano, G. Greco

Research output: Contribution to journalArticle

Abstract

In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Φ B ) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

Original languageEnglish
Pages (from-to)164-170
Number of pages7
JournalMaterials Science in Semiconductor Processing
Volume94
DOIs
Publication statusPublished - May 1 2019

Fingerprint

Gallium nitride
Epilayers
gallium nitrides
Schottky diodes
Surface properties
Diodes
inhomogeneity
Microstructure
Temperature
gallium nitride
temperature dependence
microstructure

Keywords

  • Barrier spatial inhomogeneity
  • Free standing GaN
  • Ni/GaN interface
  • Schottky barrier

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Roccaforte, F., Giannazzo, F., Alberti, A., Spera, M., Cannas, M., Cora, I., ... Greco, G. (2019). Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride. Materials Science in Semiconductor Processing, 94, 164-170. https://doi.org/10.1016/j.mssp.2019.01.036

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride. / Roccaforte, F.; Giannazzo, F.; Alberti, A.; Spera, M.; Cannas, M.; Cora, I.; Pécz, B.; Iucolano, F.; Greco, G.

In: Materials Science in Semiconductor Processing, Vol. 94, 01.05.2019, p. 164-170.

Research output: Contribution to journalArticle

Roccaforte, F, Giannazzo, F, Alberti, A, Spera, M, Cannas, M, Cora, I, Pécz, B, Iucolano, F & Greco, G 2019, 'Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride' Materials Science in Semiconductor Processing, vol. 94, pp. 164-170. https://doi.org/10.1016/j.mssp.2019.01.036
Roccaforte, F. ; Giannazzo, F. ; Alberti, A. ; Spera, M. ; Cannas, M. ; Cora, I. ; Pécz, B. ; Iucolano, F. ; Greco, G. / Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride. In: Materials Science in Semiconductor Processing. 2019 ; Vol. 94. pp. 164-170.
@article{f9851e477851422382f57378091279fc,
title = "Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride",
abstract = "In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Φ B ) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.",
keywords = "Barrier spatial inhomogeneity, Free standing GaN, Ni/GaN interface, Schottky barrier",
author = "F. Roccaforte and F. Giannazzo and A. Alberti and M. Spera and M. Cannas and I. Cora and B. P{\'e}cz and F. Iucolano and G. Greco",
year = "2019",
month = "5",
day = "1",
doi = "10.1016/j.mssp.2019.01.036",
language = "English",
volume = "94",
pages = "164--170",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

AU - Roccaforte, F.

AU - Giannazzo, F.

AU - Alberti, A.

AU - Spera, M.

AU - Cannas, M.

AU - Cora, I.

AU - Pécz, B.

AU - Iucolano, F.

AU - Greco, G.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Φ B ) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

AB - In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (Φ B ) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

KW - Barrier spatial inhomogeneity

KW - Free standing GaN

KW - Ni/GaN interface

KW - Schottky barrier

UR - http://www.scopus.com/inward/record.url?scp=85061325514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85061325514&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2019.01.036

DO - 10.1016/j.mssp.2019.01.036

M3 - Article

VL - 94

SP - 164

EP - 170

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -