Auger electron spectroscopy depth profiling of Ge/Si multilayers using He+ and Ar+ ions

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Abstract

Various Ge/Si layer structures (multilayers with 2 and 3 nm layer thicknesses, step function transition, and 1 nm Si imbedded between thick Ge layers) were depth profiled by using 1 keV He+ and Ar+ sputtering with angle of incidence of 83°. The specimen was rotated during sputtering. The depth resolution determined on the step function transition weakly depended on the type of projectile used. Similarly there was not a strong deviation of depth profiles recorded on the imbedded Si layer (thickness 1 nm) if Ar+ or He+ projectile was used. In contrast a serious difference between the depth profiles measured by Ar+ and He+ sputtering was observed in the case of the multilayer systems. Based on these observations we concluded that the depth resolution (determined according to the standard) is not a sufficient characterization of a depth profiling device. It is proposed that depth profiling of some standardized multilayer structure, with layer thicknesses of 1-2 nm should also be added to the characterization of the sputtering device.

Original languageEnglish
Pages (from-to)1091-1095
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume16
Issue number3
Publication statusPublished - May 1998

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Depth profiling
Auger electron spectroscopy
Auger spectroscopy
Sputtering
electron spectroscopy
Multilayers
Ions
Projectiles
sputtering
ions
step functions
laminates
projectiles
profiles
incidence
deviation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

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title = "Auger electron spectroscopy depth profiling of Ge/Si multilayers using He+ and Ar+ ions",
abstract = "Various Ge/Si layer structures (multilayers with 2 and 3 nm layer thicknesses, step function transition, and 1 nm Si imbedded between thick Ge layers) were depth profiled by using 1 keV He+ and Ar+ sputtering with angle of incidence of 83°. The specimen was rotated during sputtering. The depth resolution determined on the step function transition weakly depended on the type of projectile used. Similarly there was not a strong deviation of depth profiles recorded on the imbedded Si layer (thickness 1 nm) if Ar+ or He+ projectile was used. In contrast a serious difference between the depth profiles measured by Ar+ and He+ sputtering was observed in the case of the multilayer systems. Based on these observations we concluded that the depth resolution (determined according to the standard) is not a sufficient characterization of a depth profiling device. It is proposed that depth profiling of some standardized multilayer structure, with layer thicknesses of 1-2 nm should also be added to the characterization of the sputtering device.",
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N2 - Various Ge/Si layer structures (multilayers with 2 and 3 nm layer thicknesses, step function transition, and 1 nm Si imbedded between thick Ge layers) were depth profiled by using 1 keV He+ and Ar+ sputtering with angle of incidence of 83°. The specimen was rotated during sputtering. The depth resolution determined on the step function transition weakly depended on the type of projectile used. Similarly there was not a strong deviation of depth profiles recorded on the imbedded Si layer (thickness 1 nm) if Ar+ or He+ projectile was used. In contrast a serious difference between the depth profiles measured by Ar+ and He+ sputtering was observed in the case of the multilayer systems. Based on these observations we concluded that the depth resolution (determined according to the standard) is not a sufficient characterization of a depth profiling device. It is proposed that depth profiling of some standardized multilayer structure, with layer thicknesses of 1-2 nm should also be added to the characterization of the sputtering device.

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