Auger depth profiling with good depth resolution of low energy implantation induced ion mixing

A. Sulyok, A. Galisova, M. Menyhard

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Auger depth profiling using rotating specimen, grazing angle of incidence and low ion energy was carried out on multilayered Ge/Si specimen ion implanted by various fluences. Even the raw depth profiles showed qualitatively the increase of the mixing with the increasing fluence. A trialand-error type of deconvolution was developed and checked by T-DYN simulation, to restore the concentration distribution of ion mixed region from the depth profile The variance versus deposited energy curve was calculated and found to be quasi linear.

Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalMaterials Science Forum
Volume248-249
DOIs
Publication statusPublished - Jan 1 1997

Keywords

  • Depth Profiling
  • Ion Implantation
  • Ion Mixing

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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