Atomistic simulation of ion implantation into different polytypes of SiC

A. Ster, M. Posselt, A. Hallén, M. Janson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

A new version of the Crystal-TRTM code allows the calculation of dopant profiles in 3C-, 2H-, 4H- and fiH-SiC. Applications to B+, N +, AI+, As+, Ga+ implantations into 6H-SiC are presented and compared to experimental data. Simulation results for range profiles in the different polytypes demonstrate the influence of polytypism.

Original languageEnglish
Title of host publication2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings
Pages220-223
Number of pages4
DOIs
Publication statusPublished - Dec 1 2000
Event2000 13th International Conference on Ion Implantation Technology, IIT 2000 - Alpbach, Austria
Duration: Sep 17 2000Sep 22 2000

Publication series

NameProceedings of the International Conference on Ion Implantation Technology

Other

Other2000 13th International Conference on Ion Implantation Technology, IIT 2000
CountryAustria
CityAlpbach
Period9/17/009/22/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Ster, A., Posselt, M., Hallén, A., & Janson, M. (2000). Atomistic simulation of ion implantation into different polytypes of SiC. In 2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings (pp. 220-223). [924129] (Proceedings of the International Conference on Ion Implantation Technology). https://doi.org/10.1109/.2000.924129