Atomic level studies of dislocation networks in niobium-sapphire interfaces

A. Lévay, G. Möbus, V. Vitek, M. Rühle, G. Tichy

Research output: Contribution to journalArticle

2 Citations (Scopus)


In this paper we present atomistic modelling of the (0001)Al2O3 ∥ (111)Nb interface using a simple description of atomic interactions. The goal is to reveal the influence of the strength of bonding between the two materials upon the misfit dislocations formed in Nb at or near the interface. The calculations show that two types of networks of misfit dislocations may be formed depending on the strength of bonding but only the triangular network with 1/2<111> dislocations occurs if the transport of material, for example by diffusion, can take place. This is, indeed, the network found by electron microscopic studies [1]. The core structure of the misfit dislocations also depends on the strength of bonding. Comparison of simulated high resolution electron microscope (HREM) images, based on the atomistic model, with observations leads to an excellent agreement for a reasonable strength of bonding and provides means for assessment of this physical quantity.

Original languageEnglish
Pages (from-to)199-202
Number of pages4
JournalMaterials Science Forum
Publication statusPublished - Dec 1 1999


  • Atomic Structure
  • HREM Image Simulation
  • Metal-Ceramic Interface
  • Misfit Dislocation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Atomic level studies of dislocation networks in niobium-sapphire interfaces'. Together they form a unique fingerprint.

  • Cite this

    Lévay, A., Möbus, G., Vitek, V., Rühle, M., & Tichy, G. (1999). Atomic level studies of dislocation networks in niobium-sapphire interfaces. Materials Science Forum, 294-296, 199-202.