Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell

Florian Talkenberg, Stefan Illhardt, György Zoltán Radnóczi, B. Pécz, Gabriele Schmidl, Alexander Schleusener, Kadyrjan Dikhanbayev, Gauhar Mussabek, Alexander Gudovskikh, Vladimir Sivakov

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Semiconductor-insulator-semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al2O3 on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiOx) layer was detected at the Si/Al2O3 interface. The SiOx formation depends on the initial growth behavior of Al2O3 and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al2O3 and avoid the SiOx generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al2O3 interface states.

Original languageEnglish
Article number041101
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume33
Issue number4
DOIs
Publication statusPublished - Jul 1 2015

Fingerprint

SIS (semiconductors)
Atomic layer deposition
atomic layer epitaxy
silicon oxides
pretreatment
Heterojunctions
heterojunctions
repetition
Silicon oxides
Solar cells
solar cells
hydrogen plasma
Semiconductor materials
Plasmas
Hydrogen
oxygen plasma
Zinc Oxide
zinc oxides
Interface states
Silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell. / Talkenberg, Florian; Illhardt, Stefan; Radnóczi, György Zoltán; Pécz, B.; Schmidl, Gabriele; Schleusener, Alexander; Dikhanbayev, Kadyrjan; Mussabek, Gauhar; Gudovskikh, Alexander; Sivakov, Vladimir.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 33, No. 4, 041101, 01.07.2015.

Research output: Contribution to journalArticle

Talkenberg, Florian ; Illhardt, Stefan ; Radnóczi, György Zoltán ; Pécz, B. ; Schmidl, Gabriele ; Schleusener, Alexander ; Dikhanbayev, Kadyrjan ; Mussabek, Gauhar ; Gudovskikh, Alexander ; Sivakov, Vladimir. / Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2015 ; Vol. 33, No. 4.
@article{f959a5c5d41a4634b50dbbd4b8ebbc4f,
title = "Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell",
abstract = "Semiconductor-insulator-semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al2O3 on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiOx) layer was detected at the Si/Al2O3 interface. The SiOx formation depends on the initial growth behavior of Al2O3 and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al2O3 and avoid the SiOx generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al2O3 interface states.",
author = "Florian Talkenberg and Stefan Illhardt and Radn{\'o}czi, {Gy{\"o}rgy Zolt{\'a}n} and B. P{\'e}cz and Gabriele Schmidl and Alexander Schleusener and Kadyrjan Dikhanbayev and Gauhar Mussabek and Alexander Gudovskikh and Vladimir Sivakov",
year = "2015",
month = "7",
day = "1",
doi = "10.1116/1.4921726",
language = "English",
volume = "33",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell

AU - Talkenberg, Florian

AU - Illhardt, Stefan

AU - Radnóczi, György Zoltán

AU - Pécz, B.

AU - Schmidl, Gabriele

AU - Schleusener, Alexander

AU - Dikhanbayev, Kadyrjan

AU - Mussabek, Gauhar

AU - Gudovskikh, Alexander

AU - Sivakov, Vladimir

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Semiconductor-insulator-semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al2O3 on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiOx) layer was detected at the Si/Al2O3 interface. The SiOx formation depends on the initial growth behavior of Al2O3 and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al2O3 and avoid the SiOx generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al2O3 interface states.

AB - Semiconductor-insulator-semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al2O3 on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiOx) layer was detected at the Si/Al2O3 interface. The SiOx formation depends on the initial growth behavior of Al2O3 and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al2O3 and avoid the SiOx generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al2O3 interface states.

UR - http://www.scopus.com/inward/record.url?scp=84930632741&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930632741&partnerID=8YFLogxK

U2 - 10.1116/1.4921726

DO - 10.1116/1.4921726

M3 - Article

VL - 33

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 4

M1 - 041101

ER -