Atomic layer deposition and annealing of Ga doped ZnO films

Zoltán Szabó, János Volk, Z. Horváth, Zsófia Medveczky, Zsolt Czigány, Kálmán Vad, Zsófia Baji

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Ga doped ZnO films were deposited at low temperature with atomic layer deposition at different temperatures with the novel precursor, hexakis (dimethylamino) gallium. The ZnO films prepared at 300 °C on GaN substrates are epitaxial, but the Ga doping deteriorates the crystallinity: the doped films are oriented polycrystalline. The films deposited at lower temperatures are polycrystalline in all cases. Post deposition annealing procedures were applied which improved the crystallinity of the layer and increased the mobility of the films.

Original languageEnglish
Pages (from-to)95-102
Number of pages8
JournalMaterials Science in Semiconductor Processing
Volume101
DOIs
Publication statusPublished - Oct 1 2019

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Keywords

  • Atomic layer deposition
  • Gallium-doped zinc oxide
  • Light emitting diode
  • Rapid thermal annealing
  • Transparent conducting oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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