Athermal effects in ion implanted layers

J. Gyulai, H. Ryssel, L. P. Biro, L. Frey, A. Kuki, T. Kormany, G. Serfozo, N. Q. Khanh

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Defect structure and electrical characterization of boron and arsenic implanted layers has been investigated for implantation under athermal (light) excitation. This Photon Assisted (PA) implantation owes its specific properties to an additional electric field acting on charged particles including carriers and charged defects. It was shown that in case of n-type silicon this extra field draws charged vacancies and self-interstitials towards each other and, thus, diminishes transient diffusion of boron. This effect resulted in junctions which are about 20% shallower compared to conventionally processed reference wafers. Experiments using light of an Ar-ion laser and white light of a high pressure Xe arc lamp were compared. Some deactivation of carriers in the deeper laying parts of the p-region was always a by-product.

Original languageEnglish
Pages (from-to)397-404
Number of pages8
JournalRadiation Effects and Defects in Solids
Volume127
Issue number3-4
DOIs
Publication statusPublished - Jan 1 1994

Keywords

  • annealing of defects
  • boron
  • photon assisted implantation
  • silicon

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Condensed Matter Physics

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    Gyulai, J., Ryssel, H., Biro, L. P., Frey, L., Kuki, A., Kormany, T., Serfozo, G., & Khanh, N. Q. (1994). Athermal effects in ion implanted layers. Radiation Effects and Defects in Solids, 127(3-4), 397-404. https://doi.org/10.1080/10420159408221047