Asymmetric transient enhanced intermixing in Pt/Ti

P. Süle, M. Menyhárd, L. Kótis, J. Lábár, W. F. Egelhoff

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The ion-sputtering induced intermixing is studied by Monte Carlo transport of ions in matter (TRIM), molecular-dynamics (MD) simulations, and Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers. Experimental evidence is found for the asymmetry of intermixing in Pt/Ti, and in Ti/Pt. In Ti/Pt we obtain a much weaker interdiffusion (broadening at the interface) than in Pt/Ti. The unexpected enhancement of the interdiffusion of the Pt atoms into the Ti substrate has also been demonstrated by simulations. We are able to capture the essential features of intermixing using TRIM and MD simulations for ion-beam sputtering and find reasonable values for interface broadening which can be compared with the experimental measurements. We explain the asymmetry of IM by the possible occurrence of transient enhanced diffusion in Pt/Ti which manifests in the exponential high diffusity tail of the AES concentration profile.

Original languageEnglish
Article number043502
JournalJournal of Applied Physics
Volume101
Issue number4
DOIs
Publication statusPublished - 2007

Fingerprint

sputtering
asymmetry
molecular dynamics
ions
simulation
Auger spectroscopy
electron spectroscopy
ion beams
occurrences
augmentation
profiles
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Asymmetric transient enhanced intermixing in Pt/Ti. / Süle, P.; Menyhárd, M.; Kótis, L.; Lábár, J.; Egelhoff, W. F.

In: Journal of Applied Physics, Vol. 101, No. 4, 043502, 2007.

Research output: Contribution to journalArticle

@article{48f8597a312744b8bbe90cb4a9e547f9,
title = "Asymmetric transient enhanced intermixing in Pt/Ti",
abstract = "The ion-sputtering induced intermixing is studied by Monte Carlo transport of ions in matter (TRIM), molecular-dynamics (MD) simulations, and Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers. Experimental evidence is found for the asymmetry of intermixing in Pt/Ti, and in Ti/Pt. In Ti/Pt we obtain a much weaker interdiffusion (broadening at the interface) than in Pt/Ti. The unexpected enhancement of the interdiffusion of the Pt atoms into the Ti substrate has also been demonstrated by simulations. We are able to capture the essential features of intermixing using TRIM and MD simulations for ion-beam sputtering and find reasonable values for interface broadening which can be compared with the experimental measurements. We explain the asymmetry of IM by the possible occurrence of transient enhanced diffusion in Pt/Ti which manifests in the exponential high diffusity tail of the AES concentration profile.",
author = "P. S{\"u}le and M. Menyh{\'a}rd and L. K{\'o}tis and J. L{\'a}b{\'a}r and Egelhoff, {W. F.}",
year = "2007",
doi = "10.1063/1.2437661",
language = "English",
volume = "101",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Asymmetric transient enhanced intermixing in Pt/Ti

AU - Süle, P.

AU - Menyhárd, M.

AU - Kótis, L.

AU - Lábár, J.

AU - Egelhoff, W. F.

PY - 2007

Y1 - 2007

N2 - The ion-sputtering induced intermixing is studied by Monte Carlo transport of ions in matter (TRIM), molecular-dynamics (MD) simulations, and Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers. Experimental evidence is found for the asymmetry of intermixing in Pt/Ti, and in Ti/Pt. In Ti/Pt we obtain a much weaker interdiffusion (broadening at the interface) than in Pt/Ti. The unexpected enhancement of the interdiffusion of the Pt atoms into the Ti substrate has also been demonstrated by simulations. We are able to capture the essential features of intermixing using TRIM and MD simulations for ion-beam sputtering and find reasonable values for interface broadening which can be compared with the experimental measurements. We explain the asymmetry of IM by the possible occurrence of transient enhanced diffusion in Pt/Ti which manifests in the exponential high diffusity tail of the AES concentration profile.

AB - The ion-sputtering induced intermixing is studied by Monte Carlo transport of ions in matter (TRIM), molecular-dynamics (MD) simulations, and Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers. Experimental evidence is found for the asymmetry of intermixing in Pt/Ti, and in Ti/Pt. In Ti/Pt we obtain a much weaker interdiffusion (broadening at the interface) than in Pt/Ti. The unexpected enhancement of the interdiffusion of the Pt atoms into the Ti substrate has also been demonstrated by simulations. We are able to capture the essential features of intermixing using TRIM and MD simulations for ion-beam sputtering and find reasonable values for interface broadening which can be compared with the experimental measurements. We explain the asymmetry of IM by the possible occurrence of transient enhanced diffusion in Pt/Ti which manifests in the exponential high diffusity tail of the AES concentration profile.

UR - http://www.scopus.com/inward/record.url?scp=33847647561&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847647561&partnerID=8YFLogxK

U2 - 10.1063/1.2437661

DO - 10.1063/1.2437661

M3 - Article

AN - SCOPUS:33847647561

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

M1 - 043502

ER -