Asymmetric split-vacancy defects in SiC polytypes: A combined theoretical and electron spin resonance study

Viktor Ivády, Andreas Gällström, Nguyen Tien Son, Erik Janzén, A. Gali

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Transition metal defects were studied in different polytypes of silicon carbide (SiC) by ab initio supercell calculations. We found asymmetric split-vacancy (ASV) complexes for these defects that preferentially form at only one site in hexagonal polytypes, and they may not be detectable at all in cubic polytype. Electron spin resonance study demonstrates the existence of ASV complex in niobium doped 4H polytype of SiC.

Original languageEnglish
Article number195501
JournalPhysical Review Letters
Volume107
Issue number19
DOIs
Publication statusPublished - Nov 2 2011

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silicon carbides
electron paramagnetic resonance
defects
niobium
transition metals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Asymmetric split-vacancy defects in SiC polytypes : A combined theoretical and electron spin resonance study. / Ivády, Viktor; Gällström, Andreas; Son, Nguyen Tien; Janzén, Erik; Gali, A.

In: Physical Review Letters, Vol. 107, No. 19, 195501, 02.11.2011.

Research output: Contribution to journalArticle

Ivády, Viktor ; Gällström, Andreas ; Son, Nguyen Tien ; Janzén, Erik ; Gali, A. / Asymmetric split-vacancy defects in SiC polytypes : A combined theoretical and electron spin resonance study. In: Physical Review Letters. 2011 ; Vol. 107, No. 19.
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