Assessment of pulse height defect in passivated implanted planar Si detectors used for channeling measurements with slow, highly charged heavy projectiles

J. D. Meyer, S. Biri, F. Ditrói, O. Hohn, S. Runkel, K. Stiebing

Research output: Contribution to journalArticle

Abstract

The pulse height defect (PHD) of slow, highly charged 12C, 16O, 40Ar and 84Kr ions in a passivated implanted silicon detector has been measured. The detector is part of the channeling setup at the Frankfurt ECR/RFQ installation for beams of highly charged ions. In this experiment the modification of the charge states under channeling conditions in thin silicon membranes is measured. The charge states of the scattered ions are separated by post-acceleration. The PHD is an important input for the energy calibration. It allows the analysis via a parametrization which relates it to the true energy and the order number of the ions through a simple power law.

Original languageEnglish
Pages (from-to)379-382
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume190
Issue number1-4
DOIs
Publication statusPublished - May 1 2002

Keywords

  • Charge state
  • ECR
  • Heavy ion
  • PHD
  • RFQ

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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