As-grown microtopologies of solution grown GaAs(001) vicinal surfaces

T. Marek, H. P. Strunk, E. Bauser, Y. C. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The observations of the as-solution-grown GaAs(001) vicinal surfaces yield three kinds of microtopologies. Each of them develops in a certain range of growth temperature. In a low temperature range (492°C...600°C) we observe parallel growth steps with larger heights of one monolayer. In a medium range, a network consisting of two sets growth steps with larger heights is observed. At high growth temperatures (780°C...850°C) we find growth surfaces that are atomically rough. Implications of these findings for modelling the crystal growth will be discussed.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsSeshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
PublisherPubl by Materials Research Society
Pages615-620
Number of pages6
Volume317
ISBN (Print)1558992162
Publication statusPublished - 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/3/93

Fingerprint

Growth temperature
Crystallization
Crystal growth
Monolayers
gallium arsenide
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Marek, T., Strunk, H. P., Bauser, E., & Lu, Y. C. (1994). As-grown microtopologies of solution grown GaAs(001) vicinal surfaces. In S. B. Desu, D. B. Beach, B. W. Wessels, & S. Gokoglu (Eds.), Materials Research Society Symposium Proceedings (Vol. 317, pp. 615-620). Publ by Materials Research Society.

As-grown microtopologies of solution grown GaAs(001) vicinal surfaces. / Marek, T.; Strunk, H. P.; Bauser, E.; Lu, Y. C.

Materials Research Society Symposium Proceedings. ed. / Seshu B. Desu; David B. Beach; Bruce W. Wessels; Suleyman Gokoglu. Vol. 317 Publ by Materials Research Society, 1994. p. 615-620.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Marek, T, Strunk, HP, Bauser, E & Lu, YC 1994, As-grown microtopologies of solution grown GaAs(001) vicinal surfaces. in SB Desu, DB Beach, BW Wessels & S Gokoglu (eds), Materials Research Society Symposium Proceedings. vol. 317, Publ by Materials Research Society, pp. 615-620, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/29/93.
Marek T, Strunk HP, Bauser E, Lu YC. As-grown microtopologies of solution grown GaAs(001) vicinal surfaces. In Desu SB, Beach DB, Wessels BW, Gokoglu S, editors, Materials Research Society Symposium Proceedings. Vol. 317. Publ by Materials Research Society. 1994. p. 615-620
Marek, T. ; Strunk, H. P. ; Bauser, E. ; Lu, Y. C. / As-grown microtopologies of solution grown GaAs(001) vicinal surfaces. Materials Research Society Symposium Proceedings. editor / Seshu B. Desu ; David B. Beach ; Bruce W. Wessels ; Suleyman Gokoglu. Vol. 317 Publ by Materials Research Society, 1994. pp. 615-620
@inproceedings{8ef78f8705564b2a806e8f9f78694a99,
title = "As-grown microtopologies of solution grown GaAs(001) vicinal surfaces",
abstract = "The observations of the as-solution-grown GaAs(001) vicinal surfaces yield three kinds of microtopologies. Each of them develops in a certain range of growth temperature. In a low temperature range (492°C...600°C) we observe parallel growth steps with larger heights of one monolayer. In a medium range, a network consisting of two sets growth steps with larger heights is observed. At high growth temperatures (780°C...850°C) we find growth surfaces that are atomically rough. Implications of these findings for modelling the crystal growth will be discussed.",
author = "T. Marek and Strunk, {H. P.} and E. Bauser and Lu, {Y. C.}",
year = "1994",
language = "English",
isbn = "1558992162",
volume = "317",
pages = "615--620",
editor = "Desu, {Seshu B.} and Beach, {David B.} and Wessels, {Bruce W.} and Suleyman Gokoglu",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",

}

TY - GEN

T1 - As-grown microtopologies of solution grown GaAs(001) vicinal surfaces

AU - Marek, T.

AU - Strunk, H. P.

AU - Bauser, E.

AU - Lu, Y. C.

PY - 1994

Y1 - 1994

N2 - The observations of the as-solution-grown GaAs(001) vicinal surfaces yield three kinds of microtopologies. Each of them develops in a certain range of growth temperature. In a low temperature range (492°C...600°C) we observe parallel growth steps with larger heights of one monolayer. In a medium range, a network consisting of two sets growth steps with larger heights is observed. At high growth temperatures (780°C...850°C) we find growth surfaces that are atomically rough. Implications of these findings for modelling the crystal growth will be discussed.

AB - The observations of the as-solution-grown GaAs(001) vicinal surfaces yield three kinds of microtopologies. Each of them develops in a certain range of growth temperature. In a low temperature range (492°C...600°C) we observe parallel growth steps with larger heights of one monolayer. In a medium range, a network consisting of two sets growth steps with larger heights is observed. At high growth temperatures (780°C...850°C) we find growth surfaces that are atomically rough. Implications of these findings for modelling the crystal growth will be discussed.

UR - http://www.scopus.com/inward/record.url?scp=0028127544&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028127544&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1558992162

VL - 317

SP - 615

EP - 620

BT - Materials Research Society Symposium Proceedings

A2 - Desu, Seshu B.

A2 - Beach, David B.

A2 - Wessels, Bruce W.

A2 - Gokoglu, Suleyman

PB - Publ by Materials Research Society

ER -