Aqueous base developable: Easy stripping, high aspect ratio negative photoresist for optical and proton beam lithography

M. Chatzichristidi, I. Rajta, Th Speliotis, E. Valamontes, D. Goustouridis, P. Argitis, I. Raptis

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A variety of different photo resists are used for the fabrication of polymer and metal high aspect ratio structures. Among them SU-8, a chemically amplified negative tone photoresist is the mostly used. However, after processing the finished resist pattern (SU-8) is hardly removed from the substrate. In the present work the formulation and process optimization of a negative tone chemically amplified photoresist (TADEP) is presented. TADEP resist owns two advantages: the dissolution of the uncrosslinked areas in IC standard aqueous developers and the easy stripping in acetone by the assistance of ultrasonic bath. The TADEP resist is successfully applied for the fabrication of polymer and metal structures, after electroplating and stripping and also in the case of Proton Beam Writing.

Original languageEnglish
Pages (from-to)1423-1428
Number of pages6
JournalMicrosystem Technologies
Volume14
Issue number9-11
DOIs
Publication statusPublished - Oct 1 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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