APPLICATION OF SIMS ANALYSIS WITH REACTIVE SPUTTERING AND CONCLUSIONS TO THE MECHANISM OF THE SECONDARY IONIZATION.

Research output: Contribution to conferencePaper

4 Citations (Scopus)

Abstract

Detailed results of systematic investigations and practical advantages of reactive SIMS are presented. The decreasing of concentration dependence of ionization coefficient by this method gives a possibility for the determination of concentration in a broad interval, provided an etalon wafer of known concentration being available. By a comparison of the results got by reactive and pure argon sputtering a conclusion on the oxidation state of the system can be made. Using this method the enrichment of contaminations on interfaces can be detected.

Original languageEnglish
Pages2585-2588
Number of pages4
Publication statusPublished - Jan 1 1977
EventProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria
Duration: Sep 12 1977Sep 16 1977

Other

OtherProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
CityVienna, Austria
Period9/12/779/16/77

ASJC Scopus subject areas

  • Engineering(all)

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    Giber, J., & Josepovits, V. K. (1977). APPLICATION OF SIMS ANALYSIS WITH REACTIVE SPUTTERING AND CONCLUSIONS TO THE MECHANISM OF THE SECONDARY IONIZATION.. 2585-2588. Paper presented at Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl, Vienna, Austria, .