Detailed results of systematic investigations and practical advantages of reactive SIMS are presented. The decreasing of concentration dependence of ionization coefficient by this method gives a possibility for the determination of concentration in a broad interval, provided an etalon wafer of known concentration being available. By a comparison of the results got by reactive and pure argon sputtering a conclusion on the oxidation state of the system can be made. Using this method the enrichment of contaminations on interfaces can be detected.
|Number of pages||4|
|Publication status||Published - Jan 1 1977|
|Event||Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria|
Duration: Sep 12 1977 → Sep 16 1977
|Other||Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl|
|Period||9/12/77 → 9/16/77|
ASJC Scopus subject areas