Application of resonant backscattering spectrometry for determination of pore structure changes

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4 Citations (Scopus)

Abstract

In the present work slightly oxidised porous silicon samples of columnar type were investigated by resonant elastic scattering using the 3045 keV resonance in the 16O(α, α)16O reaction. If the incident energy is slightly above the resonance energy, a characteristic peak appears in the energy spectra of the backscattered particles. In porous material the individual ions travel fluctuating distance in pores, hence, the peak width depends on the structure of the sample. When changing the direction of the analysing beam to the sample, the width of the resonance peak changes in a special way characterizing the angular distribution of the pore walls. This resonance method was applied to columnar type porous Si samples implanted by 4 MeV N ions at various tilt angles and fluences. It was shown that the beam tilts the pore walls by an angle proportional to the fluence and the sine of the angle between the beam and the pore walls. Meantime, the angular divergence of the pore walls also increases. The underlying mechanism is briefly discussed.

Original languageEnglish
Pages (from-to)963-968
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume161
DOIs
Publication statusPublished - Mar 2000

Fingerprint

Backscattering
Pore structure
Spectrometry
backscattering
porosity
spectroscopy
Ions
fluence
Elastic scattering
Angular distribution
Porous silicon
Porous materials
porous materials
porous silicon
travel
divergence
ions
elastic scattering
energy spectra
angular distribution

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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title = "Application of resonant backscattering spectrometry for determination of pore structure changes",
abstract = "In the present work slightly oxidised porous silicon samples of columnar type were investigated by resonant elastic scattering using the 3045 keV resonance in the 16O(α, α)16O reaction. If the incident energy is slightly above the resonance energy, a characteristic peak appears in the energy spectra of the backscattered particles. In porous material the individual ions travel fluctuating distance in pores, hence, the peak width depends on the structure of the sample. When changing the direction of the analysing beam to the sample, the width of the resonance peak changes in a special way characterizing the angular distribution of the pore walls. This resonance method was applied to columnar type porous Si samples implanted by 4 MeV N ions at various tilt angles and fluences. It was shown that the beam tilts the pore walls by an angle proportional to the fluence and the sine of the angle between the beam and the pore walls. Meantime, the angular divergence of the pore walls also increases. The underlying mechanism is briefly discussed.",
author = "F. P{\'a}szti and E. Szil{\'a}gyi and A. Manuaba and G. Battistig",
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T1 - Application of resonant backscattering spectrometry for determination of pore structure changes

AU - Pászti, F.

AU - Szilágyi, E.

AU - Manuaba, A.

AU - Battistig, G.

PY - 2000/3

Y1 - 2000/3

N2 - In the present work slightly oxidised porous silicon samples of columnar type were investigated by resonant elastic scattering using the 3045 keV resonance in the 16O(α, α)16O reaction. If the incident energy is slightly above the resonance energy, a characteristic peak appears in the energy spectra of the backscattered particles. In porous material the individual ions travel fluctuating distance in pores, hence, the peak width depends on the structure of the sample. When changing the direction of the analysing beam to the sample, the width of the resonance peak changes in a special way characterizing the angular distribution of the pore walls. This resonance method was applied to columnar type porous Si samples implanted by 4 MeV N ions at various tilt angles and fluences. It was shown that the beam tilts the pore walls by an angle proportional to the fluence and the sine of the angle between the beam and the pore walls. Meantime, the angular divergence of the pore walls also increases. The underlying mechanism is briefly discussed.

AB - In the present work slightly oxidised porous silicon samples of columnar type were investigated by resonant elastic scattering using the 3045 keV resonance in the 16O(α, α)16O reaction. If the incident energy is slightly above the resonance energy, a characteristic peak appears in the energy spectra of the backscattered particles. In porous material the individual ions travel fluctuating distance in pores, hence, the peak width depends on the structure of the sample. When changing the direction of the analysing beam to the sample, the width of the resonance peak changes in a special way characterizing the angular distribution of the pore walls. This resonance method was applied to columnar type porous Si samples implanted by 4 MeV N ions at various tilt angles and fluences. It was shown that the beam tilts the pore walls by an angle proportional to the fluence and the sine of the angle between the beam and the pore walls. Meantime, the angular divergence of the pore walls also increases. The underlying mechanism is briefly discussed.

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

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