Application of Makyoh topography for the study of GaAs layers grown by epitaxial lateral overgrowth

F. Riesz, Z. R. Zytkiewicz

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The surface morphology of GaAs layers grown by epitaxial lateral overgrowth is studied by Makyoh topography. Bending of the individual stripes of the layer are observed and quantified. Various defects related to the imperfections of the growth are also observed. The results are compared to surface-stylus and X-ray diffraction measurements. The results show that Makyoh technique is a useful tool for simple, fast and routine assessment of such structures.

Original languageEnglish
Pages (from-to)741-746
Number of pages6
JournalJournal of Crystal Growth
Volume222
Issue number4
DOIs
Publication statusPublished - Feb 2001

Fingerprint

Topography
topography
Defects
defects
Surface morphology
X ray diffraction
diffraction
x rays
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Application of Makyoh topography for the study of GaAs layers grown by epitaxial lateral overgrowth. / Riesz, F.; Zytkiewicz, Z. R.

In: Journal of Crystal Growth, Vol. 222, No. 4, 02.2001, p. 741-746.

Research output: Contribution to journalArticle

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