Antiferromagnetic domains in (formula presented) probed by (formula presented) esr

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Abstract

The anisotropy of the static homogeneous magnetic spin susceptibility of the antiferromagnetic (Formula presented) bilayers and the crystal-field parameters are measured in Gd-doped (Formula presented) (small x) single crystals using (Formula presented) ESR at 9, 75, 150, and 225 GHz. We show that the easy magnetization direction is along [100] and that there is a magnetostriction leading to an orthorhombic lattice distortion. We observe an antiferromagnetic domain structure corresponding to the two equivalent orthorhombic distortions of the tetragonal lattice which depends on magnetic fields of the order of 1 T. The domain structure is unchanged between 10 and 150 K and is independent of thermal and magnetic history. We discuss two models: (i) charged domain walls, (ii) magnetization pinned to a small number of defective oxygen-rich Cu(1) layers.

Original languageEnglish
Pages (from-to)1176-1184
Number of pages9
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number2
DOIs
Publication statusPublished - Jan 1 1999

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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