Anti-site pair in SiC

A model of the DI center

A. Gali, P. Deák, E. Rauls, N. T. Son, I. G. Ivanov, F. H C Carlsson, E. Janzén, W. J. Choyke

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The DI low-temperature photoluminescence center is a well-known defect stable up to 1700°C annealing in SiC, still its structure is not known after decades of study. Combining experimental and theoretical studies in this paper we will show that the properties of an anti-site pair can reproduce the measured one-electron level position and local vibration modes of the D I center and the model is consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state as a means to confirm our model.

Original languageEnglish
Pages (from-to)175-179
Number of pages5
JournalPhysica B: Condensed Matter
Volume340-342
DOIs
Publication statusPublished - Dec 31 2003

Fingerprint

vibration mode
Photoluminescence
Annealing
photoluminescence
Defects
annealing
Electrons
defects
electrons
Temperature

Keywords

  • Photoluminescence center
  • Silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Gali, A., Deák, P., Rauls, E., Son, N. T., Ivanov, I. G., Carlsson, F. H. C., ... Choyke, W. J. (2003). Anti-site pair in SiC: A model of the DI center. Physica B: Condensed Matter, 340-342, 175-179. https://doi.org/10.1016/j.physb.2003.09.043

Anti-site pair in SiC : A model of the DI center. / Gali, A.; Deák, P.; Rauls, E.; Son, N. T.; Ivanov, I. G.; Carlsson, F. H C; Janzén, E.; Choyke, W. J.

In: Physica B: Condensed Matter, Vol. 340-342, 31.12.2003, p. 175-179.

Research output: Contribution to journalArticle

Gali, A, Deák, P, Rauls, E, Son, NT, Ivanov, IG, Carlsson, FHC, Janzén, E & Choyke, WJ 2003, 'Anti-site pair in SiC: A model of the DI center', Physica B: Condensed Matter, vol. 340-342, pp. 175-179. https://doi.org/10.1016/j.physb.2003.09.043
Gali A, Deák P, Rauls E, Son NT, Ivanov IG, Carlsson FHC et al. Anti-site pair in SiC: A model of the DI center. Physica B: Condensed Matter. 2003 Dec 31;340-342:175-179. https://doi.org/10.1016/j.physb.2003.09.043
Gali, A. ; Deák, P. ; Rauls, E. ; Son, N. T. ; Ivanov, I. G. ; Carlsson, F. H C ; Janzén, E. ; Choyke, W. J. / Anti-site pair in SiC : A model of the DI center. In: Physica B: Condensed Matter. 2003 ; Vol. 340-342. pp. 175-179.
@article{580ea423b3eb4755924816bedcd491f6,
title = "Anti-site pair in SiC: A model of the DI center",
abstract = "The DI low-temperature photoluminescence center is a well-known defect stable up to 1700°C annealing in SiC, still its structure is not known after decades of study. Combining experimental and theoretical studies in this paper we will show that the properties of an anti-site pair can reproduce the measured one-electron level position and local vibration modes of the D I center and the model is consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state as a means to confirm our model.",
keywords = "Photoluminescence center, Silicon carbide",
author = "A. Gali and P. De{\'a}k and E. Rauls and Son, {N. T.} and Ivanov, {I. G.} and Carlsson, {F. H C} and E. Janz{\'e}n and Choyke, {W. J.}",
year = "2003",
month = "12",
day = "31",
doi = "10.1016/j.physb.2003.09.043",
language = "English",
volume = "340-342",
pages = "175--179",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",

}

TY - JOUR

T1 - Anti-site pair in SiC

T2 - A model of the DI center

AU - Gali, A.

AU - Deák, P.

AU - Rauls, E.

AU - Son, N. T.

AU - Ivanov, I. G.

AU - Carlsson, F. H C

AU - Janzén, E.

AU - Choyke, W. J.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - The DI low-temperature photoluminescence center is a well-known defect stable up to 1700°C annealing in SiC, still its structure is not known after decades of study. Combining experimental and theoretical studies in this paper we will show that the properties of an anti-site pair can reproduce the measured one-electron level position and local vibration modes of the D I center and the model is consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state as a means to confirm our model.

AB - The DI low-temperature photoluminescence center is a well-known defect stable up to 1700°C annealing in SiC, still its structure is not known after decades of study. Combining experimental and theoretical studies in this paper we will show that the properties of an anti-site pair can reproduce the measured one-electron level position and local vibration modes of the D I center and the model is consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state as a means to confirm our model.

KW - Photoluminescence center

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=0345873473&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345873473&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.043

DO - 10.1016/j.physb.2003.09.043

M3 - Article

VL - 340-342

SP - 175

EP - 179

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -