Anti-site pair in SiC: A model of the DI center

A. Gali, P. Deák, E. Rauls, N. T. Son, I. G. Ivanov, F. H.C. Carlsson, E. Janzén, W. J. Choyke

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

The DI low-temperature photoluminescence center is a well-known defect stable up to 1700°C annealing in SiC, still its structure is not known after decades of study. Combining experimental and theoretical studies in this paper we will show that the properties of an anti-site pair can reproduce the measured one-electron level position and local vibration modes of the D I center and the model is consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state as a means to confirm our model.

Original languageEnglish
Pages (from-to)175-179
Number of pages5
JournalPhysica B: Condensed Matter
Volume340-342
DOIs
Publication statusPublished - Dec 31 2003
EventProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
Duration: Jul 28 2003Aug 1 2003

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Keywords

  • Photoluminescence center
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Gali, A., Deák, P., Rauls, E., Son, N. T., Ivanov, I. G., Carlsson, F. H. C., Janzén, E., & Choyke, W. J. (2003). Anti-site pair in SiC: A model of the DI center. Physica B: Condensed Matter, 340-342, 175-179. https://doi.org/10.1016/j.physb.2003.09.043