Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions

Z. Horváth, M. Ádám, I. Pintér, B. Cvikl, D. Korošak, T. Mrdjen, Vo Van Tuyen, Zs Makaró, C. Dücső, I. Bársony

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7 Citations (Scopus)

Abstract

Recently high temperature dependence of series resistance was obtained in Ag/n-Si and Al/n-Si/p-Si Schottky junctions prepared by ionised cluster beam deposition and by plasma immersion implantation, respectively. In this work it is shown by experiments that this feature was due to the poor quality of backside ohmic contacts.

Original languageEnglish
Pages (from-to)417-419
Number of pages3
JournalVacuum
Volume50
Issue number3-4
Publication statusPublished - Jul 1 1998

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Ohmic contacts
submerging
electric contacts
implantation
Plasmas
temperature dependence
Experiments
Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions. / Horváth, Z.; Ádám, M.; Pintér, I.; Cvikl, B.; Korošak, D.; Mrdjen, T.; Van Tuyen, Vo; Makaró, Zs; Dücső, C.; Bársony, I.

In: Vacuum, Vol. 50, No. 3-4, 01.07.1998, p. 417-419.

Research output: Contribution to journalArticle

Horváth, Z, Ádám, M, Pintér, I, Cvikl, B, Korošak, D, Mrdjen, T, Van Tuyen, V, Makaró, Z, Dücső, C & Bársony, I 1998, 'Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions', Vacuum, vol. 50, no. 3-4, pp. 417-419.
Horváth Z, Ádám M, Pintér I, Cvikl B, Korošak D, Mrdjen T et al. Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions. Vacuum. 1998 Jul 1;50(3-4):417-419.
Horváth, Z. ; Ádám, M. ; Pintér, I. ; Cvikl, B. ; Korošak, D. ; Mrdjen, T. ; Van Tuyen, Vo ; Makaró, Zs ; Dücső, C. ; Bársony, I. / Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions. In: Vacuum. 1998 ; Vol. 50, No. 3-4. pp. 417-419.
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