Anomalous bismuth-stabilized (2×1) reconstructions on GaAs(100) and InP(100) surfaces

P. Laukkanen, M. P.J. Punkkinen, H. P. Komsa, M. Ahola-Tuomi, K. Kokko, M. Kuzmin, J. Adell, J. Sadowski, R. E. Perälä, M. Ropo, T. T. Rantala, I. J. Väyrynen, M. Pessa, L. Vitos, J. Kollár, S. Mirbt, B. Johansson

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First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2×1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2×1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.

Original languageEnglish
Article number086101
JournalPhysical review letters
Issue number8
Publication statusPublished - Feb 25 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Laukkanen, P., Punkkinen, M. P. J., Komsa, H. P., Ahola-Tuomi, M., Kokko, K., Kuzmin, M., Adell, J., Sadowski, J., Perälä, R. E., Ropo, M., Rantala, T. T., Väyrynen, I. J., Pessa, M., Vitos, L., Kollár, J., Mirbt, S., & Johansson, B. (2008). Anomalous bismuth-stabilized (2×1) reconstructions on GaAs(100) and InP(100) surfaces. Physical review letters, 100(8), [086101].