Anomalous bias dependence of the noise in Porous Si led

Béla Szentpáli, Tibor Mohácsy, István Bársony

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The current-voltage characteristics and the low-frequency noise spectra of p-type Si-Porous Si-Al diode like structures were investigated. Over 1 V forward biases a reasonable fit was obtained in the Fowler-Nordheim plot. Any attempts of accurately fitting the I-V characteristic by other known transport mechanisms failed. At lower biases, however, an additional current-component appears which shows a saturating character. This current component is ascribed to trap-assisted tunneling. The measured noise spectra show 1/f character; however the magnitude of the noise shows saturation with increasing biases instead of the usual case, where the noise power scales with I2, or V 2. This finding is interpreted by a model of two parallel current paths. The noise arising from the smaller and saturating current determines the noise performance of the whole device.

Original languageEnglish
Pages (from-to)L355-L364
JournalFluctuation and Noise Letters
Volume4
Issue number2
DOIs
Publication statusPublished - Jun 1 2004

Keywords

  • Anomalous scaling
  • Low-frequency noise
  • Porous silicon
  • Tunneling

ASJC Scopus subject areas

  • Mathematics(all)
  • Physics and Astronomy(all)

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