Annealed Ti/Cr/Al contacts on n-GaN

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this study we report on the micro-, and nanostructural, morphological and electrical properties of Ti(20 nm)/Cr(120 nm)/Al(50 nm) contacts to n-GaN by electron microscopy, X-ray diffraction and I-V measurements. Tested contacts were annealed at the temperature of 400, 700 and 900 °C for 10 min in vacuum. It was found that Cr appeared in the top part of the GaN epitaxial layer at 700 °C. High resolution electron microscopy (HREM) revealed Ti2AlN MAX phase as well as Al2O3 phase at the interface of n-GaN/Ti/Cr/Al contact at 900 °C. X-ray diffraction examinations showed that new Ti 2AlN MAX phase formed and Cr3GaN as well as CrN phases developed at 900 °C. I-V characterizations exhibited that while the as-deposited and annealed Ti/Cr/Al contacts are rectifying up to 700 °C the diffusion of Cr into the epi GaN layer led to ohmic behaviour at 700 °C.

Original languageEnglish
Pages (from-to)46-49
Number of pages4
JournalVacuum
Volume100
DOIs
Publication statusPublished - 2014

Fingerprint

electron microscopy
X ray diffraction
High resolution electron microscopy
Epitaxial layers
diffraction
Electron microscopy
Electric properties
x rays
examination
electrical properties
Vacuum
vacuum
high resolution
Temperature
temperature

Keywords

  • Contacts
  • GaN
  • MAX phases
  • Solid phase reaction
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Instrumentation
  • Surfaces, Coatings and Films

Cite this

Annealed Ti/Cr/Al contacts on n-GaN. / Dobos, L.; Pécz, B.; Tóth, L.; Horváth, Z.; Horváth, Z.; Tóth, A.; Poisson, M. A.

In: Vacuum, Vol. 100, 2014, p. 46-49.

Research output: Contribution to journalArticle

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abstract = "In this study we report on the micro-, and nanostructural, morphological and electrical properties of Ti(20 nm)/Cr(120 nm)/Al(50 nm) contacts to n-GaN by electron microscopy, X-ray diffraction and I-V measurements. Tested contacts were annealed at the temperature of 400, 700 and 900 °C for 10 min in vacuum. It was found that Cr appeared in the top part of the GaN epitaxial layer at 700 °C. High resolution electron microscopy (HREM) revealed Ti2AlN MAX phase as well as Al2O3 phase at the interface of n-GaN/Ti/Cr/Al contact at 900 °C. X-ray diffraction examinations showed that new Ti 2AlN MAX phase formed and Cr3GaN as well as CrN phases developed at 900 °C. I-V characterizations exhibited that while the as-deposited and annealed Ti/Cr/Al contacts are rectifying up to 700 °C the diffusion of Cr into the epi GaN layer led to ohmic behaviour at 700 °C.",
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AU - Dobos, L.

AU - Pécz, B.

AU - Tóth, L.

AU - Horváth, Z.

AU - Horváth, Z.

AU - Tóth, A.

AU - Poisson, M. A.

PY - 2014

Y1 - 2014

N2 - In this study we report on the micro-, and nanostructural, morphological and electrical properties of Ti(20 nm)/Cr(120 nm)/Al(50 nm) contacts to n-GaN by electron microscopy, X-ray diffraction and I-V measurements. Tested contacts were annealed at the temperature of 400, 700 and 900 °C for 10 min in vacuum. It was found that Cr appeared in the top part of the GaN epitaxial layer at 700 °C. High resolution electron microscopy (HREM) revealed Ti2AlN MAX phase as well as Al2O3 phase at the interface of n-GaN/Ti/Cr/Al contact at 900 °C. X-ray diffraction examinations showed that new Ti 2AlN MAX phase formed and Cr3GaN as well as CrN phases developed at 900 °C. I-V characterizations exhibited that while the as-deposited and annealed Ti/Cr/Al contacts are rectifying up to 700 °C the diffusion of Cr into the epi GaN layer led to ohmic behaviour at 700 °C.

AB - In this study we report on the micro-, and nanostructural, morphological and electrical properties of Ti(20 nm)/Cr(120 nm)/Al(50 nm) contacts to n-GaN by electron microscopy, X-ray diffraction and I-V measurements. Tested contacts were annealed at the temperature of 400, 700 and 900 °C for 10 min in vacuum. It was found that Cr appeared in the top part of the GaN epitaxial layer at 700 °C. High resolution electron microscopy (HREM) revealed Ti2AlN MAX phase as well as Al2O3 phase at the interface of n-GaN/Ti/Cr/Al contact at 900 °C. X-ray diffraction examinations showed that new Ti 2AlN MAX phase formed and Cr3GaN as well as CrN phases developed at 900 °C. I-V characterizations exhibited that while the as-deposited and annealed Ti/Cr/Al contacts are rectifying up to 700 °C the diffusion of Cr into the epi GaN layer led to ohmic behaviour at 700 °C.

KW - Contacts

KW - GaN

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KW - Solid phase reaction

KW - Transmission electron microscopy

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