Anisotropic surface segregation of indium atoms in molecular beam epitaxy of InGaAs/GaAs quantum wells

Koichi Yamaguchi, Yoshikatsu Yasuda, András Kovács, P. Barna

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In order to investigate the dependence of indium surface segregation on step structures, InGaAs (InAs)/GaAs quantum wells (QWs) were grown by molecular beam epitaxy on vicinal GaAs(001) substrates, misoriented toward [011] and [011] directions. High energy shift and narrow linewidth of photoluminescence spectra were observed for InAs QWs prepared on the [011]-stepped surface. By cross-sectional transmission electron microscope observation, it was found that broadening of InGaAs QWs was enhanced on the [011]-stepped surface. These phenomena were explained by the anisotropic segregation effect due to the difference in the step structure between the [011] step and the [011] step.

Original languageEnglish
Pages (from-to)217-220
Number of pages4
JournalJournal of Applied Physics
Volume89
Issue number1
DOIs
Publication statusPublished - Jan 1 2001

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indium
molecular beam epitaxy
quantum wells
atoms
electron microscopes
photoluminescence
shift
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Anisotropic surface segregation of indium atoms in molecular beam epitaxy of InGaAs/GaAs quantum wells. / Yamaguchi, Koichi; Yasuda, Yoshikatsu; Kovács, András; Barna, P.

In: Journal of Applied Physics, Vol. 89, No. 1, 01.01.2001, p. 217-220.

Research output: Contribution to journalArticle

Yamaguchi, Koichi ; Yasuda, Yoshikatsu ; Kovács, András ; Barna, P. / Anisotropic surface segregation of indium atoms in molecular beam epitaxy of InGaAs/GaAs quantum wells. In: Journal of Applied Physics. 2001 ; Vol. 89, No. 1. pp. 217-220.
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