Anharmonicity of the C-H stretch mode in SiC: Unambiguous identification of hydrogen-silicon vacancy defect

A. Gali, B. Aradi, D. Heringer, W. J. Choyke, R. P. Devaty, S. Bai

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Using first principles calculations, the vibronic properties of hydrogen in a silicon vacancy (VSi+H) are investigated in 3C-SiC. The calculations show that the neutral VSi+H complex, which can bind an exciton, is stable only in lightly p-type SiC. This result is consistent with the experimental findings. The calculations are able to account well for the observed anharmonicity of the C-H stretch vibrations, up to the third harmonic, and for the isotope effects.

Original languageEnglish
Pages (from-to)237-239
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number2
DOIs
Publication statusPublished - Jan 14 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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