Angle-resolved XPS investigations of the interaction between O2 and Mo2C/Mo(1 0 0)

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Abstract

The interaction of oxygen with a carbidized Mo(1 0 0) surface was investigated at different temperatures (300 K-1000 K) with-angle resolved X-ray photoelectron spectroscopy. A carbide overlayer with a homogeneous Mo 2C stoichiometry (down to the information depth of XPS) was produced by the high-temperature decomposition of C2H4 on Mo(1 0 0). O2 adsorbs dissociatively on Mo2C/Mo(1 0 0) at room temperature. Oxidation of the carbide at 800 K results in the partial removal of carbon and leads to sub-surface O migration, accompanied by the appearance of highly oxidized Mo states. Raising the O2 adsorption temperature to 900 K decreased the carbon content further, without affecting the amount and the distribution of adsorbed O. Performing the oxidation at 1000 K led to an even more effective removal of carbon, but the oxygen content of the surface region was also reduced.

Original languageEnglish
Pages (from-to)204-207
Number of pages4
JournalVacuum
Volume80
Issue number1-3
DOIs
Publication statusPublished - Oct 14 2005

Fingerprint

X ray photoelectron spectroscopy
carbides
Carbon
carbon
Carbides
oxidation
interactions
oxygen
Oxygen
Oxidation
Temperature
stoichiometry
photoelectron spectroscopy
Stoichiometry
decomposition
adsorption
temperature
room temperature
Decomposition
Adsorption

Keywords

  • Angle-resolved X-ray photoelectron spectroscopy
  • Molybdenum carbide
  • Oxidation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Angle-resolved XPS investigations of the interaction between O2 and Mo2C/Mo(1 0 0). / Óvári, L.; Kiss, J.

In: Vacuum, Vol. 80, No. 1-3, 14.10.2005, p. 204-207.

Research output: Contribution to journalArticle

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N2 - The interaction of oxygen with a carbidized Mo(1 0 0) surface was investigated at different temperatures (300 K-1000 K) with-angle resolved X-ray photoelectron spectroscopy. A carbide overlayer with a homogeneous Mo 2C stoichiometry (down to the information depth of XPS) was produced by the high-temperature decomposition of C2H4 on Mo(1 0 0). O2 adsorbs dissociatively on Mo2C/Mo(1 0 0) at room temperature. Oxidation of the carbide at 800 K results in the partial removal of carbon and leads to sub-surface O migration, accompanied by the appearance of highly oxidized Mo states. Raising the O2 adsorption temperature to 900 K decreased the carbon content further, without affecting the amount and the distribution of adsorbed O. Performing the oxidation at 1000 K led to an even more effective removal of carbon, but the oxygen content of the surface region was also reduced.

AB - The interaction of oxygen with a carbidized Mo(1 0 0) surface was investigated at different temperatures (300 K-1000 K) with-angle resolved X-ray photoelectron spectroscopy. A carbide overlayer with a homogeneous Mo 2C stoichiometry (down to the information depth of XPS) was produced by the high-temperature decomposition of C2H4 on Mo(1 0 0). O2 adsorbs dissociatively on Mo2C/Mo(1 0 0) at room temperature. Oxidation of the carbide at 800 K results in the partial removal of carbon and leads to sub-surface O migration, accompanied by the appearance of highly oxidized Mo states. Raising the O2 adsorption temperature to 900 K decreased the carbon content further, without affecting the amount and the distribution of adsorbed O. Performing the oxidation at 1000 K led to an even more effective removal of carbon, but the oxygen content of the surface region was also reduced.

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