Analytical model for beam induced contamination in ion implantation

Heiner Ryssel, Lothar Frey, Volker Haeublein, Martin Lucassen, J. Gyulai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Ion beam induced contamination in ion implanters is controlled by three processes. Impurities are sputtered from components and reach the wafer surface, recoil implantation of contamination and finally impurity removal by ion beam sputtering occurs. An analytical model is presented which describes these processes and the resulting beam induced contamination. Simulation data are compared to experimental data to determine model parameter.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
PublisherIEEE
Pages498-501
Number of pages4
Volume1
ISBN (Print)078034538X
Publication statusPublished - 1999
EventProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn
Duration: Jun 22 1998Jun 26 1998

Other

OtherProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
CityKyoto, Jpn
Period6/22/986/26/98

Fingerprint

Ion implantation
Analytical models
Contamination
Ion beams
Impurities
Sputtering
Ions

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ryssel, H., Frey, L., Haeublein, V., Lucassen, M., & Gyulai, J. (1999). Analytical model for beam induced contamination in ion implantation. In Proceedings of the International Conference on Ion Implantation Technology (Vol. 1, pp. 498-501). IEEE.

Analytical model for beam induced contamination in ion implantation. / Ryssel, Heiner; Frey, Lothar; Haeublein, Volker; Lucassen, Martin; Gyulai, J.

Proceedings of the International Conference on Ion Implantation Technology. Vol. 1 IEEE, 1999. p. 498-501.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ryssel, H, Frey, L, Haeublein, V, Lucassen, M & Gyulai, J 1999, Analytical model for beam induced contamination in ion implantation. in Proceedings of the International Conference on Ion Implantation Technology. vol. 1, IEEE, pp. 498-501, Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98), Kyoto, Jpn, 6/22/98.
Ryssel H, Frey L, Haeublein V, Lucassen M, Gyulai J. Analytical model for beam induced contamination in ion implantation. In Proceedings of the International Conference on Ion Implantation Technology. Vol. 1. IEEE. 1999. p. 498-501
Ryssel, Heiner ; Frey, Lothar ; Haeublein, Volker ; Lucassen, Martin ; Gyulai, J. / Analytical model for beam induced contamination in ion implantation. Proceedings of the International Conference on Ion Implantation Technology. Vol. 1 IEEE, 1999. pp. 498-501
@inproceedings{9aa52f3ec7214857b5729ea2543c2e68,
title = "Analytical model for beam induced contamination in ion implantation",
abstract = "Ion beam induced contamination in ion implanters is controlled by three processes. Impurities are sputtered from components and reach the wafer surface, recoil implantation of contamination and finally impurity removal by ion beam sputtering occurs. An analytical model is presented which describes these processes and the resulting beam induced contamination. Simulation data are compared to experimental data to determine model parameter.",
author = "Heiner Ryssel and Lothar Frey and Volker Haeublein and Martin Lucassen and J. Gyulai",
year = "1999",
language = "English",
isbn = "078034538X",
volume = "1",
pages = "498--501",
booktitle = "Proceedings of the International Conference on Ion Implantation Technology",
publisher = "IEEE",

}

TY - GEN

T1 - Analytical model for beam induced contamination in ion implantation

AU - Ryssel, Heiner

AU - Frey, Lothar

AU - Haeublein, Volker

AU - Lucassen, Martin

AU - Gyulai, J.

PY - 1999

Y1 - 1999

N2 - Ion beam induced contamination in ion implanters is controlled by three processes. Impurities are sputtered from components and reach the wafer surface, recoil implantation of contamination and finally impurity removal by ion beam sputtering occurs. An analytical model is presented which describes these processes and the resulting beam induced contamination. Simulation data are compared to experimental data to determine model parameter.

AB - Ion beam induced contamination in ion implanters is controlled by three processes. Impurities are sputtered from components and reach the wafer surface, recoil implantation of contamination and finally impurity removal by ion beam sputtering occurs. An analytical model is presented which describes these processes and the resulting beam induced contamination. Simulation data are compared to experimental data to determine model parameter.

UR - http://www.scopus.com/inward/record.url?scp=0033309673&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033309673&partnerID=8YFLogxK

M3 - Conference contribution

SN - 078034538X

VL - 1

SP - 498

EP - 501

BT - Proceedings of the International Conference on Ion Implantation Technology

PB - IEEE

ER -