Recent experimental data on latent tracks induced in (Formula presented) by cluster ions are analyzed applying a thermal spike model. The track evolution can be described by the same equations in radiolysis sensitive (Formula presented) and in the radiolysis resistant (Formula presented) using similar parameter values. The efficiency of the localized energy deposition (Formula presented) for (Formula presented) which is equal within experimental error to that in (Formula presented) at high ion velocities. This indicates that the damage cross section is not sensitive to the ion velocity in (Formula presented) The similarities observed in the track evolution in insulating crystals, polymers, semiconductors, and high-(Formula presented) superconductors are explained by the Gaussian spatial distribution of the excitation energy with close values of the distribution parameters.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Jan 1 2000|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics