Backscattering and channeling effect measurements with MeV 4He ions were used to determine the depth dependence of the composition of amorphous silicon nitride layers on single-crystal silicon. The composition was stoichiometric over the entire layer for high ratios of NH3 to SiH4 used in the deposition reaction at 850°C. For lower ratios, a silicon excess was found, and in extreme cases, the silicon excess was located predominantly near the interface.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)