Analysis of silicon nitride layers on silicon by backscattering and channeling effect measurements

J. Gyulai, O. Meyer, J. W. Mayer, V. Rodriguez

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Backscattering and channeling effect measurements with MeV 4He ions were used to determine the depth dependence of the composition of amorphous silicon nitride layers on single-crystal silicon. The composition was stoichiometric over the entire layer for high ratios of NH3 to SiH4 used in the deposition reaction at 850°C. For lower ratios, a silicon excess was found, and in extreme cases, the silicon excess was located predominantly near the interface.

Original languageEnglish
Pages (from-to)232-234
Number of pages3
JournalApplied Physics Letters
Volume16
Issue number6
DOIs
Publication statusPublished - Dec 1 1970

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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