ANALYSIS OF HIGH DOSE IMPLANTED SILICON BY HIGH DEPTH RESOLUTION RBS AND SPECTROSCOPIC ELLIPSOMETRY AND TEM.

T. Lohner, G. Mezey, M. Fried, L. Ghita, C. Ghita, A. Mertens, H. Kerkow, E. Kotai, F. Pászti, F. Banyai, GY Vizkelethy, E. Jaroli, J. Gyulai, M. Somogyi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

One of the applications of high dose ion implantation is to form surface alloys or compound layers. This paper outlines a qualitative picture from optical properties of high dose Al and Sb implanted silicon. Attempts are made to separate the effect of implanted impurities from the dominant disorder contribution. As ellipsometry does not provide enough information to decide the applicability of optical models, methods sensitive to structure (channeling and TEM) were also applied.

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsD.K. Biegelsen, Charles V. Shank
PublisherMaterials Research Soc
Pages523-528
Number of pages6
Volume35
ISBN (Print)0931837006
Publication statusPublished - 1985

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Spectroscopic ellipsometry
Ellipsometry
Silicon
Ion implantation
Optical properties
Impurities
Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lohner, T., Mezey, G., Fried, M., Ghita, L., Ghita, C., Mertens, A., ... Somogyi, M. (1985). ANALYSIS OF HIGH DOSE IMPLANTED SILICON BY HIGH DEPTH RESOLUTION RBS AND SPECTROSCOPIC ELLIPSOMETRY AND TEM. In D. K. Biegelsen, & C. V. Shank (Eds.), Materials Research Society Symposia Proceedings (Vol. 35, pp. 523-528). Materials Research Soc.

ANALYSIS OF HIGH DOSE IMPLANTED SILICON BY HIGH DEPTH RESOLUTION RBS AND SPECTROSCOPIC ELLIPSOMETRY AND TEM. / Lohner, T.; Mezey, G.; Fried, M.; Ghita, L.; Ghita, C.; Mertens, A.; Kerkow, H.; Kotai, E.; Pászti, F.; Banyai, F.; Vizkelethy, GY; Jaroli, E.; Gyulai, J.; Somogyi, M.

Materials Research Society Symposia Proceedings. ed. / D.K. Biegelsen; Charles V. Shank. Vol. 35 Materials Research Soc, 1985. p. 523-528.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lohner, T, Mezey, G, Fried, M, Ghita, L, Ghita, C, Mertens, A, Kerkow, H, Kotai, E, Pászti, F, Banyai, F, Vizkelethy, GY, Jaroli, E, Gyulai, J & Somogyi, M 1985, ANALYSIS OF HIGH DOSE IMPLANTED SILICON BY HIGH DEPTH RESOLUTION RBS AND SPECTROSCOPIC ELLIPSOMETRY AND TEM. in DK Biegelsen & CV Shank (eds), Materials Research Society Symposia Proceedings. vol. 35, Materials Research Soc, pp. 523-528.
Lohner T, Mezey G, Fried M, Ghita L, Ghita C, Mertens A et al. ANALYSIS OF HIGH DOSE IMPLANTED SILICON BY HIGH DEPTH RESOLUTION RBS AND SPECTROSCOPIC ELLIPSOMETRY AND TEM. In Biegelsen DK, Shank CV, editors, Materials Research Society Symposia Proceedings. Vol. 35. Materials Research Soc. 1985. p. 523-528
Lohner, T. ; Mezey, G. ; Fried, M. ; Ghita, L. ; Ghita, C. ; Mertens, A. ; Kerkow, H. ; Kotai, E. ; Pászti, F. ; Banyai, F. ; Vizkelethy, GY ; Jaroli, E. ; Gyulai, J. ; Somogyi, M. / ANALYSIS OF HIGH DOSE IMPLANTED SILICON BY HIGH DEPTH RESOLUTION RBS AND SPECTROSCOPIC ELLIPSOMETRY AND TEM. Materials Research Society Symposia Proceedings. editor / D.K. Biegelsen ; Charles V. Shank. Vol. 35 Materials Research Soc, 1985. pp. 523-528
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