Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs

A. Baraldi, C. Ghezzi, A. Parisini, A. Bosacchi, S. Franchi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The low-temperature Hall mobility of photoexcited electrons has been measured in Si-doped MBE AlGaAs samples and compared with calculated data using the background acceptor density and the alloy scattering potential as free parameters. The possibility of discriminating between negative- or positive-U electron correlation energy for the DX centre has been investigated through a careful analysis of mobility versus temperature curves relating to different photoexcited electron densities. A crucial role of the acceptor density to explain the experimental data within the positive-U model has been evidenced.

Original languageEnglish
Pages (from-to)405-409
Number of pages5
JournalApplied Surface Science
Volume50
Issue number1-4
DOIs
Publication statusPublished - Jun 2 1991

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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