Analysis of concurrent failure mechanisms in IGBT structures during active power cycling tests

Zoltan Sarkany, Andras Vass-Varnai, M. Rencz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Die attach degradation and bond wire damage are common failure modes in power electronics components. Power cycling testing is an effective way to trigger them, and combined with effective measurement technologies also to track their development while the pulses are applied. In both cases the assessment can be done based on voltage measurements. In case of bond wire degradation the collector-emitter voltage of the devices will increase, however in case of degradation of the thermal path, a similar elevation in the same voltage parameter can be expected. In this article we will show examples of both degradation types and also a simple method to distinguish between the two if they develop in the same time.

Original languageEnglish
Title of host publicationProceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages650-654
Number of pages5
ISBN (Print)9781479969944
DOIs
Publication statusPublished - Jan 30 2014
Event2014 16th IEEE Electronics Packaging Technology Conference, EPTC 2014 - Singapore, Singapore
Duration: Dec 3 2014Dec 5 2014

Other

Other2014 16th IEEE Electronics Packaging Technology Conference, EPTC 2014
CountrySingapore
CitySingapore
Period12/3/1412/5/14

Fingerprint

Insulated gate bipolar transistors (IGBT)
Degradation
Wire
Voltage measurement
Electric potential
Power electronics
Failure modes
Testing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sarkany, Z., Vass-Varnai, A., & Rencz, M. (2014). Analysis of concurrent failure mechanisms in IGBT structures during active power cycling tests. In Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014 (pp. 650-654). [7028349] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EPTC.2014.7028349

Analysis of concurrent failure mechanisms in IGBT structures during active power cycling tests. / Sarkany, Zoltan; Vass-Varnai, Andras; Rencz, M.

Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 650-654 7028349.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sarkany, Z, Vass-Varnai, A & Rencz, M 2014, Analysis of concurrent failure mechanisms in IGBT structures during active power cycling tests. in Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014., 7028349, Institute of Electrical and Electronics Engineers Inc., pp. 650-654, 2014 16th IEEE Electronics Packaging Technology Conference, EPTC 2014, Singapore, Singapore, 12/3/14. https://doi.org/10.1109/EPTC.2014.7028349
Sarkany Z, Vass-Varnai A, Rencz M. Analysis of concurrent failure mechanisms in IGBT structures during active power cycling tests. In Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 650-654. 7028349 https://doi.org/10.1109/EPTC.2014.7028349
Sarkany, Zoltan ; Vass-Varnai, Andras ; Rencz, M. / Analysis of concurrent failure mechanisms in IGBT structures during active power cycling tests. Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 650-654
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