Analysis of chemical processes of plasma etching

G. Vályi, V. Schiller, J. Gyimesi, J. Gyulai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The emission spectrum of the plasma during the etching of silicon and SiO2 layers was examined. Emission lines of fluorine (at 704 nm) and of CO (at 483.5 nm) were detected. The application of the latter line to the detection of the end point of etching is presented and the mechanism of etchant production is described in terms of the thermochemistry of the reactions.

Original languageEnglish
Pages (from-to)215-219
Number of pages5
JournalThin Solid Films
Volume76
Issue number3
DOIs
Publication statusPublished - Feb 13 1981

Fingerprint

Plasma etching
plasma etching
Etching
etching
Thermochemistry
etchants
Fluorine
thermochemistry
Silicon
Carbon Monoxide
fluorine
emission spectra
Plasmas
silicon

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Analysis of chemical processes of plasma etching. / Vályi, G.; Schiller, V.; Gyimesi, J.; Gyulai, J.

In: Thin Solid Films, Vol. 76, No. 3, 13.02.1981, p. 215-219.

Research output: Contribution to journalArticle

Vályi, G. ; Schiller, V. ; Gyimesi, J. ; Gyulai, J. / Analysis of chemical processes of plasma etching. In: Thin Solid Films. 1981 ; Vol. 76, No. 3. pp. 215-219.
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