Analysis of amorphous layers on silicon by backscattering and channeling effect measurements

O. Meyer, J. Gyulai, J. W. Mayer

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

Backscattering and channeling of MeV 4He ions in single crystals covered with amorphous layers are discussed with the particular purpose of employing this nondestructive method to determine depth dependence of the composition, density and the total thickness of such layers. The analysis shows that the ratio of concentrations (and a relative depth scale) can be found directly from the experimental curves. To determine the absolute concentrations and depth scale independent measurement of stopping powers or layer thickness is required. Oxide layers grown on single crystal Si were used to verify the analytical results and, furthermore, we show illustrative analyses for samples with unknown characteristics. This technique may be applied rather extensively to the analysis of thin films.

Original languageEnglish
Pages (from-to)263-276
Number of pages14
JournalSurface Science
Volume22
Issue number2
DOIs
Publication statusPublished - 1970

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Silicon
Backscattering
backscattering
Single crystals
silicon
Oxides
Ions
Thin films
single crystals
stopping power
Chemical analysis
oxides
curves
thin films
ions

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Engineering(all)

Cite this

Analysis of amorphous layers on silicon by backscattering and channeling effect measurements. / Meyer, O.; Gyulai, J.; Mayer, J. W.

In: Surface Science, Vol. 22, No. 2, 1970, p. 263-276.

Research output: Contribution to journalArticle

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