Analysis of a capacitively coupled dual-frequency CF4 discharge

Z. Donkó, Z. Lj Petrović

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

We present particle-in-cell simulations of capaciti vely-coupled CF 4 RF discharges. For establishing the discharge plasma high frequency sources of either 13.56 or 100 MHz are used, while alow frequency 0.7-1.0MHz source is applied for biasing. The simulation results demonstrate that an efficient decoupling between the plasma and the biasing sources can be achieved by optimizing the choice of frequencies. The decoupling is observed by a small effect of varying of the biasing voltages of the RF sources on properties of the bulk of the plasma and the flux of the CF3+ ions hitting the electrodes, while the mean energy of ions increases with the biasing voltage. The 100 MHz/1 MHz case allows setting of these ion properties in an especially wide range. For high values of the low-(biasing) frequency RF voltage a small flux of energetic negative ions is also observed at the electrodes.

Original languageEnglish
Pages (from-to)8151-8156
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number10 B
DOIs
Publication statusPublished - Oct 21 2006

Fingerprint

Plasmas
Ions
Electric potential
decoupling
Fluxes
Electrodes
electric potential
ions
electrodes
plasma frequencies
Negative ions
negative ions
simulation
low frequencies
cells
energy

Keywords

  • Discharge simulation
  • Dual-frequency RF discharges
  • Reactive plasmas

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Analysis of a capacitively coupled dual-frequency CF4 discharge. / Donkó, Z.; Petrović, Z. Lj.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 10 B, 21.10.2006, p. 8151-8156.

Research output: Contribution to journalArticle

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