An X-ray diffraction study of the effects of rapid thermal annealing on GaAs layers on Si substrates

J. Varrio, F. Riesz, J. Lammasniemi, M. Hovinen, M. Pessa

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Abstract

The rapid thermal annealing method was applied to improve the crystalline quality of GaAs layers grown by molecular beam epitaxy (MBE) on Si (100) substrates. The annealed GaAs-on-Si samples exhibited remarkably better crystal structure than did the as-grown samples, as revealed by X-ray diffraction (XRD). The smallest XRD linewidth was 145 arc sec for a GaAs layer of 4 μm in thickness. The optimum temperature and time of annealing were found to be 930°C and 10 s for the layers having 1 μm in thickness but longer annealing times at this temperature were needed for thicker layers. Growth of a buffer layer by migration-enhanced epitaxy, prior to growing the final layer by MBE, also improved the crystalline quality when compared to that of the unannealed layers grown by the two-step MBE procedure.

Original languageEnglish
Pages (from-to)49-51
Number of pages3
JournalMaterials Letters
Volume10
Issue number1-2
DOIs
Publication statusPublished - Sep 1990

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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