An 18O study of the interaction between carbon monoxide and dry thermal SiO2 at 1100 °c

Catherine Deville Cavellin, Isabelle Trimaille, Jean Jacques Ganem, Marie D'Angelo, Ian Vickridge, Anita Pongracz, Gabor Battistig

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Abstract

The mechanisms of oxygen exchange between thermal silicon oxide films and carbon monoxide have been studied using 18O as an isotopic tracer. SiO2 layers of natural isotopic composition, obtained by thermal oxidation of silicon, were exposed at 1100 °C to 13C 18O gas at pressures ranging from 50 to 350 mbars. 18O concentration depth profiles were determined using the nuclear narrow resonance profiling technique with the narrow resonance near 151 keV in the reaction 18O (p,α) 15N. The results show that oxygen exchange takes place via two distinct processes and a mechanism for each process is proposed in the present work. The diffusion coefficient of CO molecules in the silica and the oxygen exchange frequency between CO and the silica are also determined.

Original languageEnglish
Article number033501
JournalJournal of Applied Physics
Volume105
Issue number3
DOIs
Publication statusPublished - Feb 24 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Cavellin, C. D., Trimaille, I., Ganem, J. J., D'Angelo, M., Vickridge, I., Pongracz, A., & Battistig, G. (2009). An 18O study of the interaction between carbon monoxide and dry thermal SiO2 at 1100 °c. Journal of Applied Physics, 105(3), [033501]. https://doi.org/10.1063/1.3072679