An investigation of hydrogenized amorphous Si structures with Doppler broadening positron annihilation techniques

M. P. Petkov, T. Marek, P. Asoka-Kumar, K. G. Lynn, R. S. Crandall, A. H. Mahan

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In this letter, we examine the feasibility of applying positron annihilation spectroscopy to the study of hydrogenized amorphous silicon (a-Si:H)-based structures produced by chemical vapor deposition techniques. The positron probe, sensitive to open volume formations, is used to characterize neutral and negatively charged silicon dangling bonds, typical for undoped and n-doped a-Si:H, respectively. Using depth profiling along the growth direction a difference was observed in the electronic environment of these defects, which enables their identification in a p-i-n device.

Original languageEnglish
Pages (from-to)99-101
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number1
DOIs
Publication statusPublished - 1998

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positron annihilation
amorphous silicon
positrons
vapor deposition
probes
defects
silicon
electronics
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

An investigation of hydrogenized amorphous Si structures with Doppler broadening positron annihilation techniques. / Petkov, M. P.; Marek, T.; Asoka-Kumar, P.; Lynn, K. G.; Crandall, R. S.; Mahan, A. H.

In: Applied Physics Letters, Vol. 73, No. 1, 1998, p. 99-101.

Research output: Contribution to journalArticle

Petkov, M. P. ; Marek, T. ; Asoka-Kumar, P. ; Lynn, K. G. ; Crandall, R. S. ; Mahan, A. H. / An investigation of hydrogenized amorphous Si structures with Doppler broadening positron annihilation techniques. In: Applied Physics Letters. 1998 ; Vol. 73, No. 1. pp. 99-101.
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