An electronegativity-induced spin repulsion effect

A. Stirling, Alfredo Pasquarello

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present a spin delocalization effect in radical Si-containing systems, featuring a heteroatom of high electronegativity (such as N, O, or Cl) bonded to the unsaturated Si atom. We find that the higher the electronegativity of the heteroatom, the more the localized spin shifts away from the unsaturated Si atom and the heteroatom toward saturated Si neighbors. We demonstrate that this spin repulsion toward saturated Si atoms is induced by the electronegativity difference between the Si atom and the heteroatoms. We present a simple molecular-orbital-based mechanism which fully explains the structural and electronic effects. We contrast the present spin delocalization mechanism with the classical hyperconjugation in organic chemistry. The most important consequences of this spin redistribution are the electron-spin-resonance activity of the saturated Si neighbors and the enhanced stability of the radical centers. We predict a similar effect for Ge radicals and discuss why organic systems based on carbon do not feature such spin repulsion.

Original languageEnglish
Pages (from-to)8385-8390
Number of pages6
JournalJournal of Physical Chemistry A
Volume109
Issue number37
DOIs
Publication statusPublished - Sep 22 2005

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Electronegativity
Atoms
atoms
Molecular orbitals
Paramagnetic resonance
organic chemistry
Carbon
molecular orbitals
electron paramagnetic resonance
carbon
shift
electronics

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

An electronegativity-induced spin repulsion effect. / Stirling, A.; Pasquarello, Alfredo.

In: Journal of Physical Chemistry A, Vol. 109, No. 37, 22.09.2005, p. 8385-8390.

Research output: Contribution to journalArticle

Stirling, A. ; Pasquarello, Alfredo. / An electronegativity-induced spin repulsion effect. In: Journal of Physical Chemistry A. 2005 ; Vol. 109, No. 37. pp. 8385-8390.
@article{f22607b5d607411086a9c7eced1869fd,
title = "An electronegativity-induced spin repulsion effect",
abstract = "We present a spin delocalization effect in radical Si-containing systems, featuring a heteroatom of high electronegativity (such as N, O, or Cl) bonded to the unsaturated Si atom. We find that the higher the electronegativity of the heteroatom, the more the localized spin shifts away from the unsaturated Si atom and the heteroatom toward saturated Si neighbors. We demonstrate that this spin repulsion toward saturated Si atoms is induced by the electronegativity difference between the Si atom and the heteroatoms. We present a simple molecular-orbital-based mechanism which fully explains the structural and electronic effects. We contrast the present spin delocalization mechanism with the classical hyperconjugation in organic chemistry. The most important consequences of this spin redistribution are the electron-spin-resonance activity of the saturated Si neighbors and the enhanced stability of the radical centers. We predict a similar effect for Ge radicals and discuss why organic systems based on carbon do not feature such spin repulsion.",
author = "A. Stirling and Alfredo Pasquarello",
year = "2005",
month = "9",
day = "22",
doi = "10.1021/jp053335h",
language = "English",
volume = "109",
pages = "8385--8390",
journal = "Journal of Physical Chemistry A",
issn = "1089-5639",
publisher = "American Chemical Society",
number = "37",

}

TY - JOUR

T1 - An electronegativity-induced spin repulsion effect

AU - Stirling, A.

AU - Pasquarello, Alfredo

PY - 2005/9/22

Y1 - 2005/9/22

N2 - We present a spin delocalization effect in radical Si-containing systems, featuring a heteroatom of high electronegativity (such as N, O, or Cl) bonded to the unsaturated Si atom. We find that the higher the electronegativity of the heteroatom, the more the localized spin shifts away from the unsaturated Si atom and the heteroatom toward saturated Si neighbors. We demonstrate that this spin repulsion toward saturated Si atoms is induced by the electronegativity difference between the Si atom and the heteroatoms. We present a simple molecular-orbital-based mechanism which fully explains the structural and electronic effects. We contrast the present spin delocalization mechanism with the classical hyperconjugation in organic chemistry. The most important consequences of this spin redistribution are the electron-spin-resonance activity of the saturated Si neighbors and the enhanced stability of the radical centers. We predict a similar effect for Ge radicals and discuss why organic systems based on carbon do not feature such spin repulsion.

AB - We present a spin delocalization effect in radical Si-containing systems, featuring a heteroatom of high electronegativity (such as N, O, or Cl) bonded to the unsaturated Si atom. We find that the higher the electronegativity of the heteroatom, the more the localized spin shifts away from the unsaturated Si atom and the heteroatom toward saturated Si neighbors. We demonstrate that this spin repulsion toward saturated Si atoms is induced by the electronegativity difference between the Si atom and the heteroatoms. We present a simple molecular-orbital-based mechanism which fully explains the structural and electronic effects. We contrast the present spin delocalization mechanism with the classical hyperconjugation in organic chemistry. The most important consequences of this spin redistribution are the electron-spin-resonance activity of the saturated Si neighbors and the enhanced stability of the radical centers. We predict a similar effect for Ge radicals and discuss why organic systems based on carbon do not feature such spin repulsion.

UR - http://www.scopus.com/inward/record.url?scp=25844479304&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25844479304&partnerID=8YFLogxK

U2 - 10.1021/jp053335h

DO - 10.1021/jp053335h

M3 - Article

VL - 109

SP - 8385

EP - 8390

JO - Journal of Physical Chemistry A

JF - Journal of Physical Chemistry A

SN - 1089-5639

IS - 37

ER -