An atomic force microscopy study of the surface morphology of InP/GaAs heteroepitaxial layers subjected to rapid thermal annealing

Ferenc Riesz, C. Vignali, C. Pelosi, K. Rakennus, T. Hakkarainen

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Abstract

The effect of proximity-cap rapid thermal annealing on the surface morphology of (100) InP epitaxial layers grown on GaAs substrates is studied by atomic force microscopy. Only small roughening was found beside the macroscopic thermal etch pits up to annealing at 940°C for 10 s. Artifacts in the image formation are identified.

Original languageEnglish
Pages (from-to)246-249
Number of pages4
JournalJournal of Applied Physics
Volume83
Issue number1
DOIs
Publication statusPublished - Jan 1 1998

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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