An Alternative Method to Accurately Determine the Thermal Resistance of SiC MOSFET Structures with Discrete Diodes

Andras Vass-Varnai, Young Joon Cho, Gabor Farkas, M. Rencz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To determine the thermal properties of power semiconductor devices and structures, the JEDEC JESD 51-1 static, electrical test method is a well-known and industry-wide accepted technique. The approach provides accurate and repeatable results in case of silicon based transistors in all cases. For certain compound semiconductor components, such as SiC MOSFET-s and GaN HEMT structures, the application of the electrical test method becomes in some cases challenging. If traditional test setups are used, in the unit step response function, due to parasitic effects, an electric signal may superpose on the thermal signal of interest, making it hard or even impossible to analyze the test results. If the structure has a physical diode as well, it can be used to understand the thermal properties of the package and its layers. This information can be applied in another step to gather the thermal properties from die transistors' point of view as well, without measuring it. In this article we show a combined measurement and simulation based method, which allows the accurate thermal characterization of such components, even in cases when other approaches may fail.

Original languageEnglish
Title of host publication2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages137-141
Number of pages5
ISBN (Electronic)9784886864055
DOIs
Publication statusPublished - Oct 22 2018
Event8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 - Niigata, Japan
Duration: May 20 2018May 24 2018

Other

Other8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
CountryJapan
CityNiigata
Period5/20/185/24/18

Fingerprint

Heat resistance
Diodes
Thermodynamic properties
Transistors
Step response
High electron mobility transistors
Semiconductor materials
Silicon
Industry
Hot Temperature

Keywords

  • power semiconductor
  • structure functions
  • Thermal transient testing

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Vass-Varnai, A., Cho, Y. J., Farkas, G., & Rencz, M. (2018). An Alternative Method to Accurately Determine the Thermal Resistance of SiC MOSFET Structures with Discrete Diodes. In 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 (pp. 137-141). [8507995] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IPEC.2018.8507995

An Alternative Method to Accurately Determine the Thermal Resistance of SiC MOSFET Structures with Discrete Diodes. / Vass-Varnai, Andras; Cho, Young Joon; Farkas, Gabor; Rencz, M.

2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 137-141 8507995.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vass-Varnai, A, Cho, YJ, Farkas, G & Rencz, M 2018, An Alternative Method to Accurately Determine the Thermal Resistance of SiC MOSFET Structures with Discrete Diodes. in 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018., 8507995, Institute of Electrical and Electronics Engineers Inc., pp. 137-141, 8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018, Niigata, Japan, 5/20/18. https://doi.org/10.23919/IPEC.2018.8507995
Vass-Varnai A, Cho YJ, Farkas G, Rencz M. An Alternative Method to Accurately Determine the Thermal Resistance of SiC MOSFET Structures with Discrete Diodes. In 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 137-141. 8507995 https://doi.org/10.23919/IPEC.2018.8507995
Vass-Varnai, Andras ; Cho, Young Joon ; Farkas, Gabor ; Rencz, M. / An Alternative Method to Accurately Determine the Thermal Resistance of SiC MOSFET Structures with Discrete Diodes. 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 137-141
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