Amorphous track formation in SiO2

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Amorphous track formation is analyzed in SiO2 α-quartz according to a thermal spike model. As predicted by the model, for tracks with Re > 4.5 nm R2e ∼ Se (Re - the effective track radius, Se - the electronic stopping power) fulfils for α-SiO2. The efficiency of energy deposition is g = 0.36 for low velocity ion bombardment in excellent agreement with that in yttrium iron garnet and lithium niobate. The high efficiency is the consequence of the effect of the ion velocity on the damage cross section. Tracks with Re < 4.5 nm exhibit an ambiguity that can be resolved only by new experiments. The consequences of the variation of the spatial width of the electron energy distribution with the ion velocity are discussed.

Original languageEnglish
Pages (from-to)530-533
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume122
Issue number3
DOIs
Publication statusPublished - Feb 1997

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Fingerprint Dive into the research topics of 'Amorphous track formation in SiO<sub>2</sub>'. Together they form a unique fingerprint.

  • Cite this